Piezoelectric materials for MEMS
A Picco, P Ferrarini, C Pedrini, A Cimmino… - Silicon Sensors and …, 2022 - Springer
The integration of thin films of piezoelectric materials at wafer level is of paramount
importance for the development of novel MEMS devices and innovative applications. The …
importance for the development of novel MEMS devices and innovative applications. The …
Growth of ternary PbTiOx films in a combination of binary oxide atomic layer depositions
T Watanabe, S Hoffmann-Eifert, S Mi, C Jia… - Journal of applied …, 2007 - pubs.aip.org
Ternary Pb Ti O x films were deposited at 240 C on Pt-covered Si substrates using a
combination of liquid injection atomic layer depositions of binary Ti O x and PbO films. Ti …
combination of liquid injection atomic layer depositions of binary Ti O x and PbO films. Ti …
Investigation of the amorphous to crystalline phase transition of chemical solution deposited Pb(Zr0.3Ti0.7)O3 thin films by soft X-ray absorption and soft X-ray …
T Schneller, H Kohlstedt, A Petraru, R Waser… - Journal of sol-gel …, 2008 - Springer
Chemical solution deposited (CSD) complex oxide thin films attract considerable interest in
various emerging fields as for example, fuel cells, ferroelectric random access memories or …
various emerging fields as for example, fuel cells, ferroelectric random access memories or …
Characteristics of polycrystalline SrRuO3 thin-film bottom electrodes for metallorganic chemical-vapor-deposited Pb (Zr0. 2Ti0. 8) O3 thin films
In situ and ex situ crystallized polycrystalline (SRO) thin-film electrodes are fabricated by dc
magnetron sputtering at a substrate temperature of 550 and 350 C, respectively, followed by …
magnetron sputtering at a substrate temperature of 550 and 350 C, respectively, followed by …
The effects of oxidants on the growth behavior of PbTiO3 thin film by atomic layer deposition
PbTiO3 thin films were deposited on Si and Ru substrates by atomic layer deposition (ALD)
at a substrate temperature of 200oC using H2O and O3 as oxidants. When H2O was used …
at a substrate temperature of 200oC using H2O and O3 as oxidants. When H2O was used …
Influence of the Pt Top Electrode Annealing Procedure on the Ferroelectric Property of MOCVD Pb (Zr0. 2Ti0. 8) O3 Thin Films
The influence of the electron-beam-evaporated Pt top electrode annealing procedure on the
ferroelectric performance of metalorganic chemical vapor-deposited (MOCVD) thin films …
ferroelectric performance of metalorganic chemical vapor-deposited (MOCVD) thin films …
Fabrication of ferroelectric Pb (Zr, Ti) O3 thin films by spray metalorganic chemical vapor deposition
Y Otani, M Shibuya, K Uchiyama… - Japanese Journal of …, 2007 - iopscience.iop.org
Abstract Ferroelectric Pb (Zr, Ti) O 3 (PZT) thin films were fabricated on Pt-coated Si
substrates by spray metalorganic chemical vapor deposition under atmospheric pressure …
substrates by spray metalorganic chemical vapor deposition under atmospheric pressure …
[PDF][PDF] Characteristics of Polycrystalline SrRuO3 Thin-Film Bottom Electrodes for Metallorganic Chemical-Vapor-Deposited Pb „Zr0. 2Ti0. 8… O3 Thin Films
In situ and ex situ crystallized polycrystalline SrRuO3 (SRO) thin-film electrodes are
fabricated by dc magnetron sputtering at a substrate temperature of 550 and 350 C …
fabricated by dc magnetron sputtering at a substrate temperature of 550 and 350 C …
[引用][C] Atomic layer deposition for microelectronic applications
CS Hwang - Atomic Layer Deposition of Nanostructured …, 2011 - Wiley Online Library
Atomic Layer Deposition for Microelectronic Applications Page 1 Part Two Nanostructures by
ALD Atomic Layer Deposition of Nanostructured Materials, First Edition. Edited by Nicola Pinna …
ALD Atomic Layer Deposition of Nanostructured Materials, First Edition. Edited by Nicola Pinna …