The optical properties of germanium can be tailored by combining strain engineering and n-
type doping. In this paper, we review the recent progress that has been reported in the study …

Technological platforms offering efficient integration of III-V semiconductor lasers with silicon
electronics are eagerly awaited by industry. The availability of optoelectronic circuits …

The controlled application of strain in crystalline semiconductors can be used to modify their
basic physical properties to enhance performance in electronic and photonic device …

Strain engineering is a powerful approach in micro-and optoelectronics to enhance carrier
mobility, tune the bandgap of heterostructures, or break lattice symmetry for nonlinear optics …

Germanium is an ideal candidate to achieve a monolithically integrated laser source on
silicon. Unfortunately bulk germanium is an indirect band gap semiconductor. Here, we …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

Spin-optoelectronics is an emerging technology in which novel and advanced functionalities
are enabled by the synergetic integration of magnetic, optical and electronic properties onto …

We theoretically investigate the impact of the defect-limited carrier lifetime on the
performance of germanium (Ge) light sources. For Ge LEDs, we show that improving the …

We investigate the interaction of tin alloying with tensile strain and n-type doping for
improving the performance of a Ge-based laser for on-chip optical interconnects. Using a …

Heavy n-type doping has been proposed as a route to achieve positive optical gain in
germanium layers since it is supposed to enhance the Γ c carrier density. Nevertheless, the …