In current work, the effect of the growth cycles of atomic-layer-deposition (ALD) derived
ultrathin Al2O3 interfacial passivation layer on the interface chemistry and electrical …

This paper reviews the studies on La-based high-k dielectrics for metal-oxide-semiconductor
(MOS) applications in recent years. According to the analyses of the physical and chemical …

The goal of this article is to provide an overview of the state of knowledge regarding the
Atomic Layer Deposition (ALD) of metal oxides on III–V semiconductor surfaces. An …

Effects of nitrogen incorporation on the interface chemical bonding states, optical dielectric
function, band alignment, and electrical properties of sputtering-derived HfTiO high-k gate …

Effective interface engineering techniques in III‐nitride heterojunction power devices, aiming
at yielding high VTH stability in insulated‐gate devices and suppressed current collapse in …

Charge storage characteristics of ultra-small Pt nanoparticle embedded devices were
characterized by capacitance-voltage measurements. A unique tilt target sputtering …

We report the decrease in interface trap density (D it) in Al 2 O 3/InGaAs metal-oxide-
semiconductor (MOS) capacitors by using electron cyclotron resonance plasma nitridation of …

Sputtering-derived HfO 2 high-k gate dielectric thin films have been deposited on Si
substrate by means of high vacuum physics vapor deposition method. Via characterization …

Abstract GaAs (0 0 1) substrates nitrided with N 2 plasma at various temperatures were
investigated after being exposed to air for 40 days. They were studied by means of parallel …

Physical and electrical properties of sputtered deposited Y2O3 films on NH4OH treated n-
GaAs substrate are investigated. The as-deposited films and interfacial layer formation have …