This review investigates the measurement methods employed to assess the geometry and
electrical properties of through-silicon vias (TSVs) and examines the reliability issues …

Based on the extracted resistance, inductance, capacitance, and conductance parameters,
this paper introduces the distributed transmission line model of silicon-core coaxial through …

In this article, a low-loss RF coaxial through-silicon vias (TSVs)(C-TSVs) configuration in the
silicon interposer with the embedded cooling cavity is proposed. For the single C-TSV array …

This paper introduces the electrical equivalent circuit model of Cu-Multi walled Carbon
Nanotube Heterogeneous Coaxial Through Silicon Vias (Cu-MWCNT HCTSV). Multi-walled …

Three-dimensional integrated circuits (3D IC) based on TSV (Through Silicon Via)
technology is the latest packaging technology with the smallest size and quality. As a result …

In this letter, a quasi-coaxial through-silicon-via (TSV) is presented for millimeter-wave
integrated circuit (IC) packaging. The quasi-coaxial-via (Q-COV) structure in which one side …

A bandwidth optimization model for a novel equivalent 90° transmission-line section is
proposed in this paper. Furthermore, the structure of 3-D compact 3-dB branch-line …

Through-silicon-via (TSV)-based coaxial line techniques can reduce the high-frequency loss
due to the low resistivity in the silicon substrate and thus can improve the efficiency of …

Based on laser-induced deep etching technology and through-hole filling techniques, TGV
interposers were successfully fabricated. The residual stress in the Cu overburden film …

Leveler additives for Cu electrodeposition are critical for achieving bottom-up filling in
micrometer scale and high aspect ratio (AR) through-silicon vias (TSVs). This study explores …