Leakage current reduction in n-GaN/p-Si (100) heterojunction solar cells
We report on the growth of n-GaN/p-Si heterojunction solar cells via thermal chemical vapor
deposition on Si (100) substrates at different growth temperatures (900, 950, and 1000 C) …
deposition on Si (100) substrates at different growth temperatures (900, 950, and 1000 C) …
Growth of high-quality GaN nanowires on p-Si (1 1 1) and their performance in solid state heterojunction solar cells
We report on the optimized growth of catalyst-free GaN nanowires (NWs)/p-Si by the vapor–
solid (VS) method using chemical vapor deposition (CVD). The effect of NH 3 gas flow rate …
solid (VS) method using chemical vapor deposition (CVD). The effect of NH 3 gas flow rate …
Growth of GaN films on silicon (1 1 1) by thermal vapor deposition method: Optical functions and MSM UV photodetector applications
In this study, gallium nitride (GaN) films were grown on n-Si (1 1 1) substrate by thermal
vapor deposition method in quartz tube furnace for different growth duration. Gallium metal …
vapor deposition method in quartz tube furnace for different growth duration. Gallium metal …
Interface properties determined the performance of thermally grown GaN/Si heterojunction solar cells
We report the fabrication of heterojunction solar cells via the thermal chemical vapor
deposition (CVD) of gallium nitride (GaN) nanostructures on clean Si substrates. GaN …
deposition (CVD) of gallium nitride (GaN) nanostructures on clean Si substrates. GaN …
Growth and characterization of GaN nanostructures under various ammoniating time with fabricated Schottky gas sensor based on Si substrate
This paper presents the investigation of the influence of the ammoniating time of GaN
nanowires (NWs) on the crystalline structure, surface morphology, and optical …
nanowires (NWs) on the crystalline structure, surface morphology, and optical …
Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices
We report on the structural, electrical, and transport properties of high quality CVD-fabricated
n-GaN nanorods (NRs)/p-Si heterojunction diodes. The X-ray diffraction (XRD) studies …
n-GaN nanorods (NRs)/p-Si heterojunction diodes. The X-ray diffraction (XRD) studies …
Facile synthesis and photoluminescence spectroscopy of 3D-triangular GaN nano prism islands
We report a strategy for fabrication of 3D triangular GaN nano prism islands (TGNPI) grown
on Ga/Si (553) substrate at low temperature by N2+ ions implantation using a sputtering gun …
on Ga/Si (553) substrate at low temperature by N2+ ions implantation using a sputtering gun …
Cubic and hexagonal GaN nanoparticles synthesized at low temperature
This study involves a simple and low cost chemical method for the synthesis of Gallium
Nitride (GaN) nanoparticles at low temperature. Structural and optical characterizations were …
Nitride (GaN) nanoparticles at low temperature. Structural and optical characterizations were …
Ternary Ti–Mo–Ni mixed oxide nanotube arrays as photoanode materials for efficient solar hydrogen production
To date, most studies on the fabrication and development of photoelectrodes for solar-fuel
generation have been based on simple binary systems with limited success. However …
generation have been based on simple binary systems with limited success. However …
Improved photovoltaic performance and device stability of planar heterojunction perovskite solar cells using TiO2 and TiO2 mixed with AgInS2 quantum dots as dual …
Dual electron transport layers of TiO 2 and TiO 2 mixed with AgInS 2 quantum dots (TiO 2:
AgInS 2 QDs) were used for planar heterojunction perovskite solar cells (PSCs). The …
AgInS 2 QDs) were used for planar heterojunction perovskite solar cells (PSCs). The …