This review gives an overview of the recent progress in vacuum-based n-type transition
metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding …

Metal-oxide semiconductors are considered promising alternative materials in the field of flat
panel display industry due to their advantages, such as high mobility, transparency …

Metal oxide semiconductors have gained much interest in the field of next generation
consumer electronics due to the worldwide development of flexible electronic devices and …

The stabilization and control of the electrical properties in solution‐processed amorphous‐
oxide semiconductors (AOSs) is crucial for the realization of cost‐effective, high …

To verify the effects of process conditions for the TFTs employing In–Ga–Zn-O (IGZO)
channels prepared by atomic layer deposition (ALD), such as cationic composition of …

This paper reports why the Cu/MoTi/In-Ga-Zn-O (IGZO) contact schematic exhibited
acceptable electrical properties and stability in an IGZO transistor that is used in a state-of …

Demand for increased scalability of oxide thin‐film transistors (TFTs) continues to rise, along
with the need for ever‐higher integration densities and driving currents. However, the …

Annealing processes were investigated on Indium-Gallium-Zinc-Oxide (IGZO) thin-film
transistors (TFTs). Molybdenum and aluminum were used as contact metals which defined …

This work demonstrates In-Ga-Zn-O (IGZO) as source and drain electrodes in IGZO-thin film
transistors (TFTs). The fabricated TFT depicts excellent electrical properties; its mobility is …

Oxide thin-film transistors (TFTs) are of increasing interest in the field of advanced displays.
In this work, we explore Al, InSnO (ITO), Ti, and Mo as source/drain electrodes of ITO TFTs. A …