Wafer-level vacuum packaging of smart sensors

A Hilton, DS Temple - Sensors, 2016 - mdpi.com
The reach and impact of the Internet of Things will depend on the availability of low-cost,
smart sensors—“low cost” for ubiquitous presence, and “smart” for connectivity and …

Depressing of CuCu bonding temperature by composting Cu nanoparticle paste with Ag nanoparticles

J Li, X Yu, T Shi, C Cheng, J Fan, S Cheng, T Li… - Journal of Alloys and …, 2017 - Elsevier
In this paper, we proposed a depressing bonding temperature method for Cusingle bondCu
bonding with nanoparticle paste. The paste was prepared by composting dominant Cu …

Broadband microwave crossover using combination of ring resonator and circular microstrip patch

Y Wang, AM Abbosh, B Henin - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
The design of a novel wideband microwave crossover is presented. The proposed structure
is fully compatible with microstrip circuits as it is printed on one side of a single-layer …

Fast low-temperature–pressure Cu-Sn mechanical interlock bonding (MIB) applied for 3D integration

H Wang, Z Liu, L Chen, Q Sun, Y Su, DW Zhang - Materials Letters, 2023 - Elsevier
Multi-chip bonding in 3D integration always consumes much processing time. This study
provides a novel mechanical interlock bonding (MIB) technology, which can save bonding …

Activation of electroplated-Cu surface via plasma pretreatment for low temperature Cu-Sn bonding in 3D interconnection

J Wang, Q Wang, Z Liu, Z Wu, J Cai, D Wang - Applied Surface Science, 2016 - Elsevier
The pretreatment with Ar mixed 5% H 2 plasma was applied to improve surface properties of
electroplated Cu for low temperature Cu-Sn bonding in 3D interconnection. Measurement …

Experimental and computational investigation of low temperature CuSn solid-state-diffusion bonding for 3D integration

J Cai, J Wang, Q Wang - Microelectronic Engineering, 2021 - Elsevier
Three critical experiments, including Sn interlayer thickness optimization, interfacial IMC
growth evolution, and bump size effect, have been conducted for low temperature Cusingle …

Low-temperature Cu-to-Cu electrode bonding by sintering Cu core-Ag shell nanoparticle paste

SH Chung, JT Kim, SW Jeong - Materials Today Communications, 2023 - Elsevier
Metal-to-metal bonding is critical in modern electronics technology such as 3D-IC packaging
and automotive electronics. In this study, we applied Cu core-Ag shell nanoparticle paste …

High-density large-area-array interconnects formed by low-temperature Cu/Sn–Cu bonding for three-dimensional integrated circuits

MR Lueck, JD Reed, CW Gregory… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
High-density area-array 3-D interconnects are a key enabling technology for 3-D integrated
circuits. This paper presents results of the fabrication and testing of large 640 by 512 area …

Study on Ar (5% H2) plasma pretreatment for Cu/Sn/Cu solid-state-diffusion bonding in 3D interconnection

J Wang, Q Wang, D Wang, J Cai - 2016 IEEE 66th Electronic …, 2016 - ieeexplore.ieee.org
In this work, Ar mixed 5% H2 plasma was applied to improve the surface properties of
electroplated Cu and electroplated Sn for Cu/Sn/Cu solid-state-diffusion (SSD) bonding in …

Intermetallic bonding for high-temperature microelectronics and microsystems: Solid-liquid interdiffusion bonding

KE Aasmundtveit, TT Luu, HV Nguyen… - Intermetallic …, 2018 - books.google.com
Solid-liquid interdiffusion (SLID) bonding for microelectronics and microsystems is a
bonding technique relying on intermetallics. The high-melting temperature of intermetallics …