A review for compact model of thin-film transistors (TFTs)
N Lu, W Jiang, Q Wu, D Geng, L Li, M Liu - Micromachines, 2018 - mdpi.com
Thin-film transistors (TFTs) have grown into a huge industry due to their broad applications
in display, radio-frequency identification tags (RFID), logical calculation, etc. In order to …
in display, radio-frequency identification tags (RFID), logical calculation, etc. In order to …
Low thermal budget (< 250° C) dual-gate amorphous indium tungsten oxide (IWO) thin-film transistor for monolithic 3-D integration
We experimentally demonstrate back-end-of-the-line (BEOL) compatible (<; 250° C thermal
budget) 1% tungsten (W)-doped amorphous In 2 O 3 (IWO) back-gate field-effect transistor …
budget) 1% tungsten (W)-doped amorphous In 2 O 3 (IWO) back-gate field-effect transistor …
Physical parameters based analytical IV model of long and short channel a-IGZO TFTs
This paper presents an analytical model for amorphous In-Ga-Zn-O thin film transistors
based on device physics. The proposed model comprises physical parameters including …
based on device physics. The proposed model comprises physical parameters including …
A complete charge-based capacitance model for IGZO TFTs
O Moldovan, A Castro-Carranza… - IEEE Electron …, 2019 - ieeexplore.ieee.org
We present a new complete capacitance model for the amorphous indium-gallium-zinc-
oxide (IGZO) thin-film-transistor (TFT), valid in the above-threshold and subthreshold regime …
oxide (IGZO) thin-film-transistor (TFT), valid in the above-threshold and subthreshold regime …
Physical modeling of amorphous InGaZnO thin-film transistors: The role of degenerate conduction
M Ghittorelli, F Torricelli… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
In amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs), the electron
mobility easily exceeds 10 cm 2/Vs and degenerate band conduction is observed. On the …
mobility easily exceeds 10 cm 2/Vs and degenerate band conduction is observed. On the …
Physical-based analytical model of amorphous InGaZnO TFTs including deep, tail, and free states
M Ghittorelli, ZM Kovács-Vajna… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
Amorphous InGaZnO (a-IGZO) is a candidate material for thin-film transistors (TFTs) owing to
its large electron mobility and good uniformity over large area. a-IGZO TFTs drain current …
its large electron mobility and good uniformity over large area. a-IGZO TFTs drain current …
[图书][B] Cryogenic CMOS Technology and Monolithic-3D Integration for High Performance Computing
W Chakraborty - 2022 - search.proquest.com
The relentless scaling of CMOS integrated circuit (IC) technology following Moore's law has
enabled faster, smaller, and energy efficient electronics for last 60 years. However, Moore's …
enabled faster, smaller, and energy efficient electronics for last 60 years. However, Moore's …
Metal Oxide Semiconductor Thin-Film Transistors: Device Physics and Compact Modeling
W Deng, J Fang, X Wei, F Yu - Outlook and Challenges of Nano Devices …, 2017 - Springer
Metal oxide semiconductor thin-film transistors (TFTs) have been recognized as the most
promising technology in the field of flexible electronics and flat-panel displays because of …
promising technology in the field of flexible electronics and flat-panel displays because of …