V Kumar, RK Maurya, G Rawat… - Semiconductor …, 2023 - iopscience.iop.org
In the present work, a high-k dielectric hafnium dioxide and lead zirconate titanate (PZT) have been incorporated as a ferroelectric (FE) layer in the gate stack. The I on/I off ratio …
The double-gate MOSFET is proposed for high-voltage and high-power applications with decreased short-channel effects (SCEs) and drain current with gate overlap. This model …
Abstract The Multigate (Double-gate) MOSFET has been proposed for high voltage and high- power applications with decreased short channel effects and drain current with gate overlap …