Nucleation and growth are critical steps in crystallization, which plays an important role in
determining crystal structure, size, morphology, and purity. Therefore, understanding the …

Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

III-V semiconductor nanowires deterministically placed on top of silicon electronic platform
would open many avenues in silicon-based photonics, quantum technologies and energy …

III-V ternary nanowires and nanowire heterostructures offer almost unlimited possibilities for
the band-gap design and can be integrated with Si electronic platform. Most of such …

Selective area growth (SAG) of III-V nanowires (NWs) by molecular beam epitaxy (MBE) and
related epitaxy techniques offer several advantages over growth on unpatterned substrates …

Selective area growth of nanomembranes (NMs), nanofins, and planar nanowires (NWs)
can pave the way for monolithic integration of III-V photonics with Si electronics and enable …

The growth kinetics of vertical III–V nanowires (NWs) were clarified long ago. The increasing
aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the …

Vertical growth rate of highly anisotropic III–V nanostructures, including the vapor–liquid–
solid or catalyst-free nanowires and quasi-one-dimensional nanomembranes obtained by …

Modeling of the growth process is required for the synthesis of III–V ternary nanowires with
controllable composition. Consequently, new theoretical approaches for the description of …