Evidence of Poole-frenkel and Fowler-Nordheim tunneling transport mechanisms in leakage current of (Pd/Au)/Al0. 22Ga0. 78N/GaN heterostructures
In this report, the gate leakage mechanism for AlGaN/GaN high electron mobility transistors
(HEMTs) is consistently analyzed by means of temperature-dependent reverse gate current …
(HEMTs) is consistently analyzed by means of temperature-dependent reverse gate current …
TCAD-based optimization of field plate length & passivation layer of AlGaN/GaN HEMT for higher cut-off frequency & breakdown voltage
ATLAS TCAD-based comparative investigation (mainly breakdown voltage, cut-off frequency
and leakage current) has been presented in this work for different length of gate field plate …
and leakage current) has been presented in this work for different length of gate field plate …
Charge-based compact model of gate leakage current for AlInN/GaN and AlGaN/GaN HEMTs
A Debnath, N DasGupta… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
The gate leakage current is analytically modeled for AlInN/GaN and AlGaN/GaN high-
electron mobility transistor (HEMT) devices using a charge-based approach. Four different …
electron mobility transistor (HEMT) devices using a charge-based approach. Four different …
Hole trap, leakage current and barrier inhomogeneity in (Pt/Au) Al0. 2Ga0. 8N/GaN heterostructures
In this work, we report on the electrical characteristics of Pt/Au Schottky contacts to Al 0.2 Ga
0.8 N/GaN heterostructures. Indeed, we have realized gate current-voltage I (V) and deep …
0.8 N/GaN heterostructures. Indeed, we have realized gate current-voltage I (V) and deep …
Influence of AlN and GaN pulse ratios in thermal atomic layer deposited AlGaN on the electrical properties of AlGaN/GaN schottky diodes
Atomic layer deposited AlGaN with different AlN and GaN pulse ratios (2: 1, 1: 1, and 1: 2)
was used to prepare AlGaN/GaN Schottky diodes, and their current transport mechanisms …
was used to prepare AlGaN/GaN Schottky diodes, and their current transport mechanisms …
Au-Free AlGaN/GaN HEMT on Flexible Kapton Substrate
S Niranjan, R Muralidharan, P Sen… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this article, we report on the electrical performance of AlGaN/GaN high-electron mobility
transistors (HEMTs) fabricated using gold (Au)-free process, after being transferred onto …
transistors (HEMTs) fabricated using gold (Au)-free process, after being transferred onto …
Two-dimensional electron gas at the AlGaN/GaN interface: Layer thickness dependence
VN Popok, PA Caban, PP Michalowski… - Journal of Applied …, 2020 - pubs.aip.org
In the current paper, the structure and properties of AlGaN/GaN interfaces are studied,
explaining the role of AlGaN layer thickness on the two-dimensional electron gas (2DEG) …
explaining the role of AlGaN layer thickness on the two-dimensional electron gas (2DEG) …
Impact of barrier layer thickness on DC and RF performance of AlGaN/GaN high electron mobility transistors
This work investigates the impact of barrier layer thickness on DC and RF performance of a
GaN HEMT device, targeting the low noise high gain application. An optimisation workflow …
GaN HEMT device, targeting the low noise high gain application. An optimisation workflow …
Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate
X Jiang, CH Li, SX Yang, JH Liang, LK Lai… - Chinese …, 2023 - iopscience.iop.org
The reverse gate leakage mechanism of W-gate and TiN-gate AlGaN/GaN high-electron-
mobility transistors (HEMTs) with N 2 plasma surface treatment is investigated using current …
mobility transistors (HEMTs) with N 2 plasma surface treatment is investigated using current …
GaN MOSHEMT employing HfO2 as a gate dielectric with partially etched barrier
K Han, L Zhu - Semiconductor Science and Technology, 2017 - iopscience.iop.org
In order to suppress the gate leakage current of a GaN high electron mobility transistor (GaN
HEMT), a GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) is …
HEMT), a GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) is …