Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage
Ferroelectric memory is a promising candidate for next‐generation nonvolatile memory
owing to its outstanding performance such as low power consumption, fast speed, and high …
owing to its outstanding performance such as low power consumption, fast speed, and high …
Resistive memory devices at the thinnest limit: progress and challenges
The Si‐based integrated circuits industry has been developing for more than half a century,
by focusing on the scaling‐down of transistor. However, the miniaturization of transistors will …
by focusing on the scaling‐down of transistor. However, the miniaturization of transistors will …
Resistive switching mechanism of MoS2 based atomristor
Resistive switching mechanism of MoS2 based atomristor - IOPscience Skip to content IOP
Science home Accessibility Help Search Journals Journals list Browse more than 100 …
Science home Accessibility Help Search Journals Journals list Browse more than 100 …
Conductive mechanism in memristor at the thinnest limit: The case based on monolayer boron nitride
Atomic picture and electronic transport property are taken into account to investigate the
nonvolatile resistive switching mechanism of a memristor at the thinnest limit, just based on …
nonvolatile resistive switching mechanism of a memristor at the thinnest limit, just based on …
Strain Engineering the Ferroelectric Polarization and Optical Absorption in the FEβ-In2Se3 Monolayer
Z Tang, M Dai, Y Chen, Q He, X Luo… - The Journal of Physical …, 2022 - ACS Publications
The van der Waals (vdW)-layered material In2Se3, known for exhibiting spontaneous
ferroelectricity at room temperature, has promising applications in nonvolatile memory and …
ferroelectricity at room temperature, has promising applications in nonvolatile memory and …
Air‐Stable Atomically Encapsulated Crystalline‐Crystalline Phase Transitions in In2Se3
Abstract The layered semiconductor In2Se3 has a low temperature crystalline–crystalline
(α→ β) phase transformation with distinct electrical properties that make it a promising …
(α→ β) phase transformation with distinct electrical properties that make it a promising …
Stacking selected polarization switching and phase transition in vdW ferroelectric α-In2Se3 junction devices
Y Wu, T Zhang, D Guo, B Li, K Pei, W You, Y Du… - Nature …, 2024 - nature.com
The structure and dynamics of ferroelectric domain walls are essential for polarization
switching in ferroelectrics, which remains relatively unexplored in two-dimensional …
switching in ferroelectrics, which remains relatively unexplored in two-dimensional …
Atomic-scale manipulation of polar domain boundaries in monolayer ferroelectric In2Se3
Abstract Domain boundaries have been intensively investigated in bulk ferroelectric
materials and two-dimensional materials. Many methods such as electrical, mechanical and …
materials and two-dimensional materials. Many methods such as electrical, mechanical and …
Complex charge density waves in simple electronic systems of two-dimensional III2–VI3 materials
Charge density wave (CDW) is the phenomenon of a material that undergoes a
spontaneous lattice distortion and modulation of the electron density. Typically, the formation …
spontaneous lattice distortion and modulation of the electron density. Typically, the formation …
Controllable spin splitting in 2D ferroelectric few-layer γ-GeSe
S Shi, KR Hao, XY Ma, QB Yan… - Journal of Physics …, 2023 - iopscience.iop.org
Abstract γ-GeSe is a new type of layered bulk material that was recently successfully
synthesized. By means of density functional theory first-principles calculations, we …
synthesized. By means of density functional theory first-principles calculations, we …