A comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses
Gas-sensing technology that is ubiquitous has progressively gained significance in our daily
lives. There is a growing requirement for real-time, dependable and low-concentration gas …
lives. There is a growing requirement for real-time, dependable and low-concentration gas …
Physics and chemistry of nitrogen dioxide (NO2) adsorption on gallium nitride (GaN) surface and its interaction with the yellow-luminescence-associated surface state
Surface states have been a longstanding and sometimes underestimated problem in gallium
nitride (GaN) based devices. The instability caused by surface-charge-trapping in GaN …
nitride (GaN) based devices. The instability caused by surface-charge-trapping in GaN …
High Electron Mobility Transistor (HEMT) based hydrogen sensor for deep-surface applications: Effect of Air and N2 atmosphere
The detection of hydrogen in the Earth's deep underground poses a major challenge due to
the lack of oxygen and continuous changes in environmental conditions. An innovative class …
the lack of oxygen and continuous changes in environmental conditions. An innovative class …
High-performance nitrogen dioxide gas sensor for ppb-level detection based on GaN nanoshuttles
Y Chen, D Han, D Li, X He, Z Liu, X Liu, S Sang… - Microchemical …, 2023 - Elsevier
GaN nanoshuttles have been successfully fabricated via facile hydrothermal and further
nitridation method. The morphology and structure indicate that GaN nanoshuttles have large …
nitridation method. The morphology and structure indicate that GaN nanoshuttles have large …
Performance optimization of nitrogen dioxide gas sensor based on Pd-AlGaN/GaN HEMTs by gate bias modulation
We investigated the sensing characteristics of NO2 gas sensors based on Pd-AlGaN/GaN
high electron mobility transistors (HEMTs) at high temperatures. In this paper, we …
high electron mobility transistors (HEMTs) at high temperatures. In this paper, we …
Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Sensitive NO2 Detection
Z Hu, L Zhou, L Li, B Ying, Y Zhao, P Wang, H Li… - Chemosensors, 2023 - mdpi.com
Colloidal quantum dots (CQDs) are gaining increasing attention for gas sensing applications
due to their large surface area and abundant active sites. However, traditional resistor-type …
due to their large surface area and abundant active sites. However, traditional resistor-type …
Multifunctional Plasmonic Sensor for Excellent UV Photodetection and NO2 Gas Sensing by an Array of Al Nanocaps on GaN Truncated Nanocones
Plasmonics has been demonstrated to improve the performance of various optoelectronic
devices operating in the infrared to visible wavelength regime. However, limited by optical …
devices operating in the infrared to visible wavelength regime. However, limited by optical …
Investigation of thin-barrier AlGaN/GaN HEMT heterostructures for enhanced gas-sensing performance
In this study, a theoretical relationship between two-dimensional electron gas (2DEG)
properties of AlGaN/GaN high-electron-mobility transistor (HEMT) hetero-structure and …
properties of AlGaN/GaN high-electron-mobility transistor (HEMT) hetero-structure and …
NO2 adsorption on GaN surface and its interaction with the yellow-luminescence-associated surface state
Trapping of charge at surface states is a longstanding problem in GaN that hinders a full
realization of its potential as a semiconductor for microelectronics. At least part of this charge …
realization of its potential as a semiconductor for microelectronics. At least part of this charge …