Indium tin oxide (ITO) is generally used as an electrode material but has recently been
demonstrated to be a competitive candidate for use in semiconductor layers in high …

The variation in energy bandgaps of amorphous oxide semiconducting SiZnSnO (a-SZTO)
has been investigated by controlling the oxygen partial pressure (O p). The systematic …

The study on voltage hysteresis (V Hys) and instability under the time dependence positive
bias stress at a fixed temperature (PBTS) in amorphous silicon zinc tin oxide (a-SZTO) thin …

The synergistic impact of deposition temperature conditions for the InGaZnO (IGZO) and
gate insulator (GI) layers during the thermal atomic-layer deposition process on the device …

Mechanically flexible In–Ga–Zn-O (IGZO) thin-film transistors (TFTs) were fabricated and
characterized on poly (ethylene naphthalate)(PEN) with various film thicknesses. The …

Vertical-channel thin-film transistors (VTFTs), featured to uniquely employ the In–Ga–Sn–O
(IGTO)-active channel layers prepared by atomic layer deposition, were fabricated with a …

In this study, the influence of the thickness of the channel layer on the electrical properties
and stability of tungsten-doped indium oxide (IWO) thin-film transistors (TFTs) was …

The charge-trap memory thin-film transistors (CTM-TFTs) using ZnO charge-trap layer (CTL)
were fabricated and characterized, in which ZnO CTL was deposited by atomic layer …

Thin-film transistors (TFTs) based on amorphous oxide semiconductors have proven
successful in the display industry and have recently expanded their applications …

Fabrication, electrical characterizations and numerical simulations are performed on radio-
frequency sputtered amorphous SiZnSnO thin film transistors (TFTs). Experimental transfer …