In this review paper, several new approaches about the 3C-SiC growth are been presented.
In fact, despite the long research activity on 3C-SiC, no devices with good electrical …

Silicon carbide (SiC) is a fascinating material. In one way, it is very simple; there are only two
atoms building up the crystal—silicon and carbon, where each atom is sp3-hybridized and …

HfC coatings were deposited on the surface of carbon/carbon (C/C) composites and CVD-
SiC coating by low-pressure chemical vapor deposition (CVD), respectively. The effects of …

For a long time now, 3C-SiC has attracted attention of the semiconductor community due to
its very interesting properties. The lack of commercial 3C-SiC seeds for epitaxy has forced …

Abstract β-Ga 2 O 3 based photodetectors are being intensively researched as possible
substitutes to conventional Silicon deep-UV PDs. However, high cost of single-crystalline Ga …

The presence of extended bi-dimensional defects is one of the key issues that hinder the
use of wide band-gap materials hetero-epitaxially grown on silicon. In this work, we …

Raman spectroscopy was applied to investigate a series of SiC films grown on Si and 6H-
SiC substrates by a new method of solid gas phase epitaxy. During the growth characteristic …

Growth of single crystal 3C-SiC films on large area off-axis (111) Si substrate by chemical
vapour deposition technique is here reported. The growth was conducted on off-axis Si …

In this work an extended study of the carbonization process of the silicon surface and of a
low temperature transition layer in the temperature rump on the 3C-SiC epitaxial growth has …

High electrical conductivity graphene/epitaxial-3C–SiC (G/epi-3C–SiC) composite films
have the potential to the applications such as micro-electro-mechanical systems, distributed …