Next‐generation machine vision systems incorporating two‐dimensional materials: progress and perspectives

P Wu, T He, H Zhu, Y Wang, Q Li, Z Wang, X Fu… - InfoMat, 2022 - Wiley Online Library
Abstract Machine vision systems (MVSs) are an important component of intelligent systems,
such as autonomous vehicles and robots. However, with the continuous increase in data …

Electromigration in three-dimensional integrated circuits

Z Shen, S Jing, Y Heng, Y Yao, KN Tu… - Applied Physics Reviews, 2023 - pubs.aip.org
The development of big data and artificial intelligence technology is increasing the need for
electronic devices to become smaller, cheaper, and more energy efficient, while also having …

A reconfigurable 3-D-stacked SPAD imager with in-pixel histogramming for flash LIDAR or high-speed time-of-flight imaging

SW Hutchings, N Johnston, I Gyongy… - IEEE Journal of Solid …, 2019 - ieeexplore.ieee.org
A 256 256 single-photon avalanche diode (SPAD) sensor integrated into a 3-D-stacked 90-
nm 1P4M/40-nm 1P8M process is reported for flash light detection and ranging (LIDAR) or …

Novel stacked CMOS image sensor with advanced Cu2Cu hybrid bonding

Y Kagawa, N Fujii, K Aoyagi… - 2016 IEEE …, 2016 - ieeexplore.ieee.org
We have successfully mass-produced novel stacked back-illuminated CMOS image sensors
(BI-CIS). In the new CIS, we introduced advanced Cu2Cu hybrid bonding that we had …

Scalable, sub 2μm pitch, Cu/SiCN to Cu/SiCN hybrid wafer-to-wafer bonding technology

E Beyne, SW Kim, L Peng, N Heylen… - 2017 IEEE …, 2017 - ieeexplore.ieee.org
This paper presents a novel approach to face-to-face wafer-to-wafer (W2W) bonding using
SiCN-to-SiCN dielectric bonding, in combination with direct Cu-Cu bonding using Cu pads …

Backside illuminated SPAD image sensor with 7.83 μm pitch in 3D-stacked CMOS technology

T Al Abbas, NAW Dutton, O Almer… - 2016 IEEE …, 2016 - ieeexplore.ieee.org
We present the first 3D-stacked backside illuminated (BSI) single photon avalanche diode
(SPAD) image sensor capable of both single photon counting (SPC) intensity, and time …

A high-PDE, backside-illuminated SPAD in 65/40-nm 3D IC CMOS pixel with cascoded passive quenching and active recharge

S Lindner, S Pellegrini, Y Henrion… - IEEE Electron …, 2017 - ieeexplore.ieee.org
We present a complete pixel based on a single-photon avalanche diode (SPAD) fabricated
in a backside-illuminated (BSI) 3D IC technology. The chip stack comprises an image …

3D photon-to-digital converter for radiation instrumentation: Motivation and future works

JF Pratte, F Nolet, S Parent, F Vachon, N Roy… - Sensors, 2021 - mdpi.com
Analog and digital SiPMs have revolutionized the field of radiation instrumentation by
replacing both avalanche photodiodes and photomultiplier tubes in many applications …

Microsystems using three-dimensional integration and TSV technologies: Fundamentals and applications

Z Wang - Microelectronic Engineering, 2019 - Elsevier
As a powerful enabling technology, three-dimensional (3D) integration, which uses wafer
bonding to integrate multiple wafers in the vertical direction and uses through‑silicon-vias …

Hybrid bonding for 3D stacked image sensors: impact of pitch shrinkage on interconnect robustness

J Jourdon, S Lhostis, S Moreau… - 2018 IEEE …, 2018 - ieeexplore.ieee.org
Hybrid bonding is a high-density technology for 3D integration but further interconnect
scaling down could jeopardize electrical and reliability performance. A study of the influence …