This paper presents the first 28-/37-/39-GHz linear Doherty power amplifier (PA) in silicon for
broadband fifthgeneration (5G) applications. We introduce a new transformer-based on-chip …

In this paper, we present the receiver and the on-chip antenna sections of a fully integrated
77-GHz four-element phased-array transceiver with on-chip antennas in silicon. The …

Sixty-gigahertz power (PA) and low-noise (LNA) amplifiers have been implemented, based
on algorithmic design methodologies for mm-wave CMOS amplifiers, in a 90-nm RF-CMOS …

A+ 20 dBm power amplifier (PA) for applications in the 60 GHz industrial scientific medical
(ISM) band is presented. The PA is fabricated in a 0.13-mum SiGe BiCMOS process …

In this paper, a distributed active transformer for the operation in the millimeter-wave
frequency range is presented. The transformer utilizes stacked coupled wires as opposed to …

<? Pub Dtl=""?> Design equations and performance limits of Class-E power amplifiers at mm-
waves, including the limitations imposed by active and passive devices in a given …

This paper describes the implementation of 60 and 77GHz PAs in standard 90nm CMOS
technology. An accurate transistor model is developed that enables designing circuits …

This paper reviews silicon millimeter-wave radio circuits operating between 60 and 100GHz.
Transmitter and receiver chips operating in the 60-GHz ISM band are highlighted, where the …

The goal of achieving terahertz (THz) transistors within the silicon material system has
generated significant recent interest. In this paper, we use operating temperature as an …

Based on a newly introduced zero phase shifter (ZPS), a 2-D distributed power-combining
network is developed in this paper to provide simultaneous distributed amplification and …