Leakage current asymmetry and resistive switching behavior of SrTiO3

SA Mojarad, JP Goss, KSK Kwa, Z Zhou… - Applied Physics …, 2012 - pubs.aip.org
The resistive switching characteristics of SrTiO 3 metal-insulator-metal capacitors are
investigated. The current-density versus voltage (JV) characteristics show asymmetry at all …

Mechanism of leakage current reduction of tantalum oxide capacitors by titanium doping

WS Lau, TS Tan, P Babu, NP Sandler - Applied physics letters, 2007 - pubs.aip.org
In this letter, the authors will point out that defect states related to oxygen vacancies in
tantalum oxide capacitors can be suppressed by titanium doping, resulting in significant …

Tailoring the structural and microstructural properties of nanosized tantalum oxide for high temperature electrochemical gas sensors

A Bonavita, E Di Bartolomeo… - … of nanoscience and …, 2009 - ingentaconnect.com
Ta2O5 nanopowders to be used as sensing electrodes in high temperature electrochemical
gas sensors for hydrocarbons detection were synthesized using a sol–gel method and their …

Effects of Si and Ti impurities on electrical properties of sol–gel-derived amorphous SrTa2O6 thin films by UV/O3 treatment

L Lu, T Nishida, M Echizen, Y Ishikawa, K Uchiyama… - Applied Physics A, 2013 - Springer
Sol–gel-derived SrTa 2 O 6 thin films were fabricated at a low temperature of 500á░ C. To
improve their leakage current properties, additional UV/O 3-assisted annealing was …

[PDF][PDF] Leakage Current and Resistive Switching Mechanisms in SrTiO3

SA Mojarad - 2013 - core.ac.uk
BIPOLAR BEHAVIOUR OF SrTiO3 Page 1 Leakage Current and Resistive Switching
Mechanisms in SrTiO3 Shahin Ameiryan Mojarad Doctor of Philosophy Submitted in partial …

Leakage current and resistive switching mechanisms in SrTiO3

S Ameiryan Mojarad - 2013 - theses.ncl.ac.uk
Resistive switching random access memory devices have attracted considerable attention
due to exhibiting fast programming, non-destructive readout, low power-consumption, high …

Ultrasonic Spray Pyrolysis Deposition and Characterization of Tantalum–Aluminum Oxide Thin Films

O Rico-Fuentes, JC Alonso, G Santana… - Journal of The …, 2007 - iopscience.iop.org
Tantalum oxide and tantalum–aluminum oxide films have been prepared by pyrosol using
alcoholic start solution of tantalum chloride and aluminum acetylacetonate at substrates …

Constant current tress characteristics of Ti doped Ta2O5 on silicon

A Skeparovski, N Novkovski… - 2008 26th …, 2008 - ieeexplore.ieee.org
Electrical behavior of Ti doped Ta 2 O 5 films under constant current stress was studied. It
was found that during the current flow, electrons get trapped on pre-existing traps as well as …