Current status of AlInN layers lattice-matched to GaN for photonics and electronics
We report on the current properties of Al 1− x In x N (x≈ 0.18) layers lattice-matched (LM) to
GaN and their specific use to realize nearly strain-free structures for photonic and electronic …
GaN and their specific use to realize nearly strain-free structures for photonic and electronic …
Mass transfer techniques for large-scale and high-density microLED arrays
Inorganic-based micro light-emitting diodes (microLEDs) offer more fascinating properties
and unique demands in next-generation displays. However, the small size of the microLED …
and unique demands in next-generation displays. However, the small size of the microLED …
Recent progress in the growth of highly reflective nitride-based distributed Bragg reflectors and their use in microcavities
The growth of highly-reflective nitride-based distributed Bragg reflectors (DBRs) and their
use in vertical cavity structures is reviewed. We discuss the various nitride material systems …
use in vertical cavity structures is reviewed. We discuss the various nitride material systems …
A conductivity‐based selective etching for next generation GaN devices
Electrochemical etching having large selectivity based on the conductivity of n‐type GaN
was investigated to demonstrate the feasibility of novel optical and microelectromechanical …
was investigated to demonstrate the feasibility of novel optical and microelectromechanical …
Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contacts
We report III-nitride vertical-cavity surface-emitting lasers (VCSELs) with buried tunnel
junction (BTJ) contacts. To form the BTJs, GaN TJ contacts were etched away outside the …
junction (BTJ) contacts. To form the BTJs, GaN TJ contacts were etched away outside the …
Sub-milliampere-threshold continuous wave operation of GaN-based vertical-cavity surface-emitting laser with lateral optical confinement by curved mirror
T Hamaguchi, H Nakajima, M Tanaka, M Ito… - Applied Physics …, 2019 - iopscience.iop.org
The continuous wave operation of a gallium-nitride-based vertical-cavity surface-emitting
laser (GaN-based VCSEL) that uses boron ion implantation for lateral current confinement …
laser (GaN-based VCSEL) that uses boron ion implantation for lateral current confinement …
Integrated photonics on silicon with wide bandgap GaN semiconductor
N Vico Triviño, U Dharanipathy, JF Carlin… - Applied Physics …, 2013 - pubs.aip.org
We report on GaN self-supported photonic structures consisting in freestanding waveguides
coupled to photonic crystal waveguides and cavities operating in the near-infrared. GaN …
coupled to photonic crystal waveguides and cavities operating in the near-infrared. GaN …
The fabrication of large-area, free-standing GaN by a novel nanoetching process
A simple yet versatile nanoetching process in porosifying and'machining'GaN is reported in
this work. By combining different porosifying conditions through potentiostatic modulation or …
this work. By combining different porosifying conditions through potentiostatic modulation or …
A liftoff process of GaN layers and devices through nanoporous transformation
A process to slice and separate GaN device layers for vertical light emitting diodes (LEDs) is
presented through a developed electrochemical anodization process to create nanoporous …
presented through a developed electrochemical anodization process to create nanoporous …
High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers
D Simeonov, E Feltin, A Altoukhov, A Castiglia… - Applied Physics …, 2008 - pubs.aip.org
The authors report a technique for selective wet chemical etching of an AlInN sacrificial layer
lattice-matched to GaN for the fabrication of air-gap photonic structures. It is used to …
lattice-matched to GaN for the fabrication of air-gap photonic structures. It is used to …