A semiconductor laser device includes a cavity extending in a propagation direction of a
laser beam (X-direction). A front facet is on one end of the cavity through which the laser …

The present inventors have studied to develop a technique to form a coating film of
AlNaforementioned on a facet of a cavity to implement a nitride semiconductor laser device …

(57) ABSTRACT A nitride semiconductor light emitting device includes a first coat film of
aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat …

Disclosed herein is a high-reliability semiconductor device. The laser diode includes: a
substrate; a multi-layer film including a first conductivity type cladding layer provided on the …

(73) Assignee: Sharp Kabushiki Kaisha, Osaka (JP) 2003, OO15715 A1 1/2003 Sakai (*)
Notice: Subject to any disclaimer, the term of this(Continued) patent is extended or adjusted …

US7750363B2 - Nitride semiconductor light-emitting device having an end face coating film
and method of manufacturing the same - Google Patents US7750363B2 - Nitride …

(57) ABSTRACT A nitride semiconductor light-emitting device including a coating film and a
reflectance control film Successively formed on a light-emitting portion, in which the light …

(57) ABSTRACT A nitride semiconductor light-emitting element includes a layered
semiconductor body which is made of a group III nitride semiconductor, and includes a light …

BACKGROUND The present disclosure relates to nitride semiconductor light-emitting
devices, speci? cally relates to nitride semicon ductor light-emitting devices in Which a …

(57) ABSTRACT A nitride semiconductor laser element has: a nitride semicon ductor layer
having cavity planes at the ends of a waveguide region, an insulating film formed on an …