From MTJ device to hybrid CMOS/MTJ circuits: A review
Spintronics is one of the growing research areas which has the capability to overcome the
issues of static power dissipation and volatility suffered by the complementary metal-oxide …
issues of static power dissipation and volatility suffered by the complementary metal-oxide …
[HTML][HTML] Optimizing free layer of magnetic tunnel junction for true random number generator
PB Alisha, TS Warrier - Memories-Materials, Devices, Circuits and Systems, 2023 - Elsevier
True random number generators (TRNGs) should ideally generate lengthy chains of non-
repeating, uncorrelated bit-streams that are efficient in terms of both energy and area …
repeating, uncorrelated bit-streams that are efficient in terms of both energy and area …
[HTML][HTML] Magnetic tunnel junctions using epitaxially grown FeAlSi electrode with soft magnetic property
S Akamatsu, M Oogane, M Tsunoda, Y Ando - AIP Advances, 2022 - pubs.aip.org
Magnetic tunnel junctions (MTJs) with (001)-oriented D0 3-FeAlSi epitaxial films, which have
both soft magnetic properties and surface flatness, were fabricated and characterized. A …
both soft magnetic properties and surface flatness, were fabricated and characterized. A …
[HTML][HTML] Temperature dependence of tunnel magnetoresistance in serial magnetic tunnel junctions
D Zhao, Y Wang, J Shao, Y Chen, Z Fu, Q Xia, S Wang… - AIP Advances, 2022 - pubs.aip.org
Magnetic tunnel junctions have been widely used in various applications, such as magnetic
sensors and magnetic random-access memories. In the practical application of MTJs, they …
sensors and magnetic random-access memories. In the practical application of MTJs, they …
Influence of free layer surface roughness on magnetic and electrical properties of 300 mm CMOS-compatible MTJ stacks
The magnetic tunnel junction (MTJ) is a highly versatile device widely used in today's
spintronic applications such as magnetoresistive random access memory (MRAM), magnetic …
spintronic applications such as magnetoresistive random access memory (MRAM), magnetic …
A perspective on ultrafast magnetization switching in ferromagnets using helicity-independent optical pulses
We offer a brief overview of the present status of ultrafast helicity-independent all-optical
magnetization switching (HI-AOS) phenomena in ferromagnet (FM) films and multilayers …
magnetization switching (HI-AOS) phenomena in ferromagnet (FM) films and multilayers …
Tuning the linear field range of tunnel magnetoresistive sensor with MgO capping in perpendicular pinned double-interface CoFeB/MgO structure
A double-interface CoFeB/MgO perpendicular tunnel magnetoresistance (p-TMR) structure
has been proposed as a solution to improve the thermal stability of perpendicular magnetic …
has been proposed as a solution to improve the thermal stability of perpendicular magnetic …
Tunneling magnetoresistance (TMR) materials and devices for magnetic sensors
With the booming development of consumer electronics products, superior
magnetoresistance (MR) sensors gradually substitute traditional sensors based on the Hall …
magnetoresistance (MR) sensors gradually substitute traditional sensors based on the Hall …
[HTML][HTML] Design of energy-efficient hybrid STT-MTJ/CMOS-based LIM logic gates for IoT applications
Abstract Complementary Metal Oxide Silicon (CMOS) technology faces a major concern in
power dissipation due to the scale-down of technology nodes to the nanoscale. To, resolve …
power dissipation due to the scale-down of technology nodes to the nanoscale. To, resolve …
Fabrication and Reliability Analysis of Nanoscale Magnetic Tunnel Junctions
Y Wang, D Zhao, Y Chen, Z Fu, H Zhang, Z Zhou… - Spin, 2021 - World Scientific
Magnetic tunnel junction with perpendicular magnetic anisotropy (p-MTJ) is the core
component in spintronics-based memory, logic and sense devices, the synthetic anti …
component in spintronics-based memory, logic and sense devices, the synthetic anti …