US10446700B2 - Microstructure enhanced absorption photosensitive devices - Google
Patents US10446700B2 - Microstructure enhanced absorption photosensitive devices …

H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic
radiation of shorter wavelength or corpuscular radiation and specially adapted either for the …

Package structures and methods are provided to integrate optoelectronic and CMOS
devices using SOI semiconductor substrates for photonics applications. For example, a pack …

Disclosed are process enhancements to fully integrate the processing of a photonics device
into a CMOS manufacturing process flow. A CMOS wafer may be divided into different …

(57) ABSTRACT A photonic structure can include in one aspect one or more waveguides
formed by patterning of waveguiding material adapted to propagate light energy. Such …

Disclosed herein are designs, structures and techniques for advanced packaging of multi-
function photonic integrated circuits that allow such high-performance multi-function …

Disclosed herein are co-packaging structures, devices, and methods for integrating a
photonic integrated circuit (PIC), an electronic integrated circuit including drivers and …

Methods and systems for a low-voltage integrated silicon high-speed modulator may include
an optical modulator comprising first and second optical waveguides and two optical phase …

H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic
radiation of shorter wavelength or corpuscular radiation and specially adapted either for the …

Integrated circuits having complementary metal-oxide semi conductor (CMOS) and
photonics circuitry and techniques for three-dimensional integration thereofare provided. In …