Recent progress in deep-depletion diamond metal–oxide–semiconductor field-effect transistors
Diamond has been explored to develop prototype field-effect transistors (FETs). At present,
various architectures that are suited to high temperature and high-radiation environments …
various architectures that are suited to high temperature and high-radiation environments …
A 6.7-GHz active gate driver for GaN FETs to combat overshoot, ringing, and EMI
HCP Dymond, J Wang, D Liu… - … on Power Electronics, 2017 - ieeexplore.ieee.org
Active gate driving has been demonstrated to beneficially shape switching waveforms in Si-
and SiC-based power converters. For faster GaN power devices with sub-10-ns switching …
and SiC-based power converters. For faster GaN power devices with sub-10-ns switching …
A 13.56-MHz full-bridge class-D ZVS inverter with dynamic dead-time control for wireless power transfer systems
H Tebianian, Y Salami, B Jeyasurya… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
This paper presents the development of a Class-D full-bridge zero-voltage switching (ZVS)
inverter, applicable to wireless power transfer (WPT) systems, operating at 13.56 MHz …
inverter, applicable to wireless power transfer (WPT) systems, operating at 13.56 MHz …
Characterization and analysis of an innovative gate driver and power supplies architecture for HF power devices with high dv/dt
VS Nguyen, L Kerachev, P Lefranc… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
This paper presents a specific architecture for a low-side/high-side gate driver
implementation for power devices running at high switching frequencies and under very …
implementation for power devices running at high switching frequencies and under very …
A high-efficiency dynamic inverter dead-time adjustment method based on an improved GaN HEMTs switching model
Benefited from the fast switching speed, Gallium nitride (GaN) high electron mobility
transistors (HEMTs) have been widely used in high switching frequency converters …
transistors (HEMTs) have been widely used in high switching frequency converters …
A high efficiency model-based adaptive dead-time control method for GaN HEMTs considering nonlinear junction capacitors in triangular current mode operation
Gallium nitride (GaN) high-electron-mobility transistor (HEMT) has the advantages of high
switching speed and low ON-resistance, which make it widely used in high-frequency …
switching speed and low ON-resistance, which make it widely used in high-frequency …
Analysis of dead-time energy loss in GaN-based TCM converters with an improved GaN HEMT model
Y Zhang, W Xu, Y Xie, T Liu, Z Wu… - … on Power Electronics, 2022 - ieeexplore.ieee.org
For gallium nitride (GaN) based triangular current mode (TCM) applications, the dead-time
has a significant effect on the switching loss. However, previous GaN high electron mobility …
has a significant effect on the switching loss. However, previous GaN high electron mobility …
Predictive dead time controller for GaN‐based boost converters
L Schirone, M Macellari, F Pellitteri - IET Power Electronics, 2017 - Wiley Online Library
A dynamic dead time controller is presented, specifically intended to operate in synchronous
boost converters based on GaN field‐effect transistor switches. These transistors have a …
boost converters based on GaN field‐effect transistor switches. These transistors have a …
A Half-bridge Gate Driver with Self-adjusting and Tunable Dead-time Modes for Efficient Switched-mode Power Systems
The design of high-voltage (HV) switched-mode power systems (SMPSys) poses multiple
challenges, such as minimizing the switching losses and preventing possible shoot-through …
challenges, such as minimizing the switching losses and preventing possible shoot-through …
An active dead-time control circuit with timing elements for a 45-V input 1-MHz half-bridge converter
In this study, a dead-time control circuit is proposed to generate independent delays for the
high and low sides of half-bridge converter switches. In addition to greatly decreasing the …
high and low sides of half-bridge converter switches. In addition to greatly decreasing the …