Interface and surface engineering of black phosphorus: a review for optoelectronic and photonic applications

H Mu, W Yu, J Yuan, S Lin, G Zhang - Materials Futures, 2022 - iopscience.iop.org
Since being rediscovered as an emerging 2D material, black phosphorus (BP), with an
extraordinary energy structure and unusually strong interlayer interactions, offers new …

Recent advances in ambipolar transistors for functional applications

Y Ren, X Yang, L Zhou, JY Mao… - Advanced Functional …, 2019 - Wiley Online Library
Ambipolar transistors represent a class of transistors where positive (holes) and negative
(electrons) charge carriers both can transport concurrently within the semiconducting …

Recent advances in doping engineering of black phosphorus

H Hu, Z Shi, K Khan, R Cao, W Liang… - Journal of Materials …, 2020 - pubs.rsc.org
Black phosphorus (BP), as a typical layered two-dimensional (2D) material, has attracted
tremendous attention due to its high carrier mobility, unique in-plane anisotropic structure …

Spectrally selective mid-wave infrared detection using Fabry-Pérot cavity enhanced black phosphorus 2D photodiodes

W Yan, VR Shresha, Q Jeangros, NS Azar… - ACS …, 2020 - ACS Publications
Thin two-dimensional (2D) material absorbers have the potential to reduce volume-
dependent thermal noise in infrared detectors. However, any reduction in noise must be …

Design and tailoring of two-dimensional Schottky, PN and tunnelling junctions for electronics and optoelectronics

L Lv, J Yu, M Hu, S Yin, F Zhuge, Y Ma, T Zhai - Nanoscale, 2021 - pubs.rsc.org
Owing to their superior carrier mobility, strong light–matter interactions, and flexibility at the
atomically thin thickness, two-dimensional (2D) materials are attracting wide interest for …

Intrinsic and engineered properties of black phosphorus

Q Zhong - Materials Today Physics, 2022 - Elsevier
Black phosphorus (BP) is a two-dimensional (2D) layered semiconductor with tunable direct
bandgap, high carrier mobility, balanced on/off ratio and significant crystal anisotropy. These …

SnSe/MoS2 van der Waals Heterostructure Junction Field‐Effect Transistors with Nearly Ideal Subthreshold Slope

J Guo, L Wang, Y Yu, P Wang, Y Huang… - Advanced …, 2019 - Wiley Online Library
The minimization of the subthreshold swing (SS) in transistors is essential for low‐voltage
operation and lower power consumption, both critical for mobile devices and internet of …

Waveguide integrated high-speed black phosphorus photodetector on a thin film lithium niobate platform

Y Xue, X Wu, K Chen, J Wang, L Liu - Optical Materials Express, 2022 - opg.optica.org
The thin film lithium niobate platform has shown its potential to support high-performance
active and passive integrated photonic devices. Yet, due to the transparency of lithium …

Functional ink formulation for printing and coating of graphene and other 2D Materials: challenges and solutions

M Jafarpour, F Nüesch, J Heier… - Small …, 2022 - Wiley Online Library
The properties of 2D materials are unparalleled when compared to their 3D counterparts;
many of these properties are a consequence of their size reduction to only a couple of …

p-Type Two-Dimensional Semiconductors: From Materials Preparation to Electronic Applications

L Tang, J Zou - Nano-Micro Letters, 2023 - Springer
Abstract Two-dimensional (2D) materials are regarded as promising candidates in many
applications, including electronics and optoelectronics, because of their superior properties …