Recent developments within the field of medium voltage wide-bandgap semiconductor
devices are drawing attention from both researchers and industries due to the demanding …

Incentives provided by European governments have resulted in the rapid growth of the
photovoltaic (PV) market. Many PV modules are now commercially available, and there are …

This paper presents two novel measurement methods to characterize silicon carbide (SiC)
MOSFET devices. The resulting data are utilized to significantly improve the extraction of a …

An improved model of medium voltage (1200 V) silicon carbide (SiC) MOSFET based on
PSpice is proposed in this paper, which is suitable for wide temperature range applications …

The gallium nitride high electron mobility transistors (GaN HEMTs) are a superior candidate
for the new-generation power electronics systems with higher efficiency and power density …

The aim of this study is to review the state‐of‐the‐art of recent prediction methods for power
metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) switching losses using …

This paper presents a universal SPICE model for field-effect transistors, which is
independent from technology and semiconductor material. The created behavioral …

This article presents a comprehensive analysis of nonlinear voltage-dependent
capacitances of vertical silicon carbide power MOSFETs with lateral channel, focusing …

This paper presents results on behavior modeling of a general purpose metal-oxide-
semiconductor field-effect transistor (MOSFET) for simulation of power electronics systems …

Compared to silicon counterparts, silicon carbide (SiC) power mosfets have lower on-state
resistance and faster switching speed, which in turn makes them better candidates for high …