C Gmachl, F Capasso, DL Sivco… - Reports on progress in …, 2001 - iopscience.iop.org
Quantum cascade (QC') lasers are reviewed. These are semiconductor injection lasers based on intersubband transitions in a multiple-quantum-well (QW) heterostructure …
This book discusses the physics and applications of quantum well infrared photodetectors (QWIPs). The presentation is intended for both students as a learning text and …
III-nitride nanostructures have recently emerged as promising materials for new intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on …
C Gmachl, HM Ng, SN George Chu, AY Cho - Applied Physics Letters, 2000 - pubs.aip.org
Intersubband optical absorption around 1.55 μm has been measured in GaN/AlGaN multiple quantum wells (MQWs) grown by molecular-beam epitaxy. First, peak absorption …
X Wang, A Yoshikawa - Progress in crystal growth and characterization of …, 2004 - Elsevier
III-Nitrides receive much research attention and obtain significant development due to their wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …
O Wada - New Journal of Physics, 2004 - iopscience.iop.org
Future bandwidth demand in optical communication and signal processing systems will soon exceed 100 Gb s− 1 as is commonly forecasted from a throughput experience curve for …
We have studied the effect of growth and design parameters on the performance of Si-doped GaN/AlN multiquantum-well (MQW) structures for intersubband optoelectronics in the near …
Wireless, optical, and electronic networks continue to converge, prompting heavy research into the interface between microwave electronics, ultrafast optics, and photonic …
N Iizuka, K Kaneko, N Suzuki - Applied physics letters, 2002 - pubs.aip.org
GaN/AlN multiple-quantum-well structures were grown by molecular beam epitaxy. Abrupt interfaces and good periodicity were confirmed. Absorption measurements indicated that …