Terahertz quantum-cascade lasers

BS Williams - Nature photonics, 2007 - nature.com
Six years after their birth, terahertz quantum-cascade lasers can now deliver milliwatts or
more of continuous-wave coherent radiation throughout the terahertz range—the spectral …

Recent progress in quantum cascade lasers and applications

C Gmachl, F Capasso, DL Sivco… - Reports on progress in …, 2001 - iopscience.iop.org
Quantum cascade (QC') lasers are reviewed. These are semiconductor injection lasers
based on intersubband transitions in a multiple-quantum-well (QW) heterostructure …

Quantum well infrared photodetectors

H Schneider, HC Liu - 2007 - Springer
This book discusses the physics and applications of quantum well infrared photodetectors
(QWIPs). The presentation is intended for both students as a learning text and …

III-nitride semiconductors for intersubband optoelectronics: a review

M Beeler, E Trichas, E Monroy - Semiconductor Science and …, 2013 - iopscience.iop.org
III-nitride nanostructures have recently emerged as promising materials for new
intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on …

Intersubband absorption at in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers

C Gmachl, HM Ng, SN George Chu, AY Cho - Applied Physics Letters, 2000 - pubs.aip.org
Intersubband optical absorption around 1.55 μm has been measured in GaN/AlGaN multiple
quantum wells (MQWs) grown by molecular-beam epitaxy. First, peak absorption …

Molecular beam epitaxy growth of GaN, AlN and InN

X Wang, A Yoshikawa - Progress in crystal growth and characterization of …, 2004 - Elsevier
III-Nitrides receive much research attention and obtain significant development due to their
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …

Femtosecond all-optical devices for ultrafast communication and signal processing

O Wada - New Journal of Physics, 2004 - iopscience.iop.org
Future bandwidth demand in optical communication and signal processing systems will
soon exceed 100 Gb s− 1 as is commonly forecasted from a throughput experience curve for …

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

PK Kandaswamy, F Guillot, E Bellet-Amalric… - Journal of Applied …, 2008 - pubs.aip.org
We have studied the effect of growth and design parameters on the performance of Si-doped
GaN/AlN multiquantum-well (MQW) structures for intersubband optoelectronics in the near …

[图书][B] Microwave photonics

CH Lee - 2006 - taylorfrancis.com
Wireless, optical, and electronic networks continue to converge, prompting heavy research
into the interface between microwave electronics, ultrafast optics, and photonic …

Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy

N Iizuka, K Kaneko, N Suzuki - Applied physics letters, 2002 - pubs.aip.org
GaN/AlN multiple-quantum-well structures were grown by molecular beam epitaxy. Abrupt
interfaces and good periodicity were confirmed. Absorption measurements indicated that …