Electronics based on two-dimensional materials
The compelling demand for higher performance and lower power consumption in electronic
systems is the main driving force of the electronics industry's quest for devices and/or …
systems is the main driving force of the electronics industry's quest for devices and/or …
Nanometre-scale electronics with III–V compound semiconductors
JA Del Alamo - Nature, 2011 - nature.com
For 50 years the exponential rise in the power of electronics has been fuelled by an increase
in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and …
in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and …
300mm heterogeneous 3D integration of record performance layer transfer germanium PMOS with silicon NMOS for low power high performance logic applications
We report a short channel high performance Ge PMOS integrated with Si NMOS in
sequential monolithic 3D stacking. A layer transfer Ge PMOS with record I ON= 497 μA/μm at …
sequential monolithic 3D stacking. A layer transfer Ge PMOS with record I ON= 497 μA/μm at …
Considerations for ultimate CMOS scaling
KJ Kuhn - IEEE transactions on Electron Devices, 2012 - ieeexplore.ieee.org
This review paper explores considerations for ultimate CMOS transistor scaling. Transistor
architectures such as extremely thin silicon-on-insulator and FinFET (and related …
architectures such as extremely thin silicon-on-insulator and FinFET (and related …
Academic and industry research progress in germanium nanodevices
R Pillarisetty - Nature, 2011 - nature.com
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first
material used in such devices. During the 1950s, just after the birth of the transistor, solid …
material used in such devices. During the 1950s, just after the birth of the transistor, solid …
FinFETs with strained well regions
YJ Lee, CW Liu, WU Cheng-Hsien, CH Ko… - US Patent …, 2017 - Google Patents
(57) ABSTRACT A device includes a Substrate and insulation regions over a portion of the
Substrate. A first semiconductor region is between the insulation regions and having a first …
Substrate. A first semiconductor region is between the insulation regions and having a first …
FinFETs with strained well regions
YJ Lee, CW Liu, WU Cheng-Hsien, CH Ko… - US Patent …, 2018 - Google Patents
(57) ABSTRACT A device includes a substrate and insulation regions over a portion of the
substrate. A first semiconductor region is between the insulation regions and having a first …
substrate. A first semiconductor region is between the insulation regions and having a first …
Germanium based field-effect transistors: Challenges and opportunities
The performance of strained silicon (Si) as the channel material for today's metal-oxide-
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
Emerging applications for high K materials in VLSI technology
RD Clark - Materials, 2014 - mdpi.com
The current status of High K dielectrics in Very Large Scale Integrated circuit (VLSI)
manufacturing for leading edge Dynamic Random Access Memory (DRAM) and …
manufacturing for leading edge Dynamic Random Access Memory (DRAM) and …
The evolution of scaling from the homogeneous era to the heterogeneous era
M Bohr - 2011 international electron devices meeting, 2011 - ieeexplore.ieee.org
Traditional MOSFET scaling served our industry well for more than three decades by
providing continuous improvements in transistor performance, power and cost. This was the …
providing continuous improvements in transistor performance, power and cost. This was the …