Amorphous oxide semiconductors have gained significant attention in the past few decades
and have emerged as a promising material for thin-film transistors (TFTs) because they offer …

Praseodymium-doped indium zinc oxide (PrIZO) has been employed as the channel layer of
thin-film transistors (TFTs). The TFTs with Pr doping exhibited a remarkable suppression of …

In this study, the explanation of the enhanced negative-bias-illumination-temperature stress
stability (NBITS) of indium-zinc-oxide thin-film transistors (IZO TFTs) under terbium (Tb) …

In this paper, a solution-processed zirconium oxide (ZrO2) dielectric was deposited by spin
coating with varying pre-annealing temperatures and post-annealing temperatures. The …

The effect of intrinsic stress on the structure and physical properties of silicon-tin-oxide (STO)
films have been investigated. Since a state of tensile stress is available in as-deposited …

A simple oxygen (O 2) plasma-treatment process was utilized to achieve high performance
aluminum oxide (Al 2 O 3) dielectrics for thin film transistors (TFTs) through modulating the …

High-performance amorphous oxide semiconductor thin film transistors (AOS-TFT) with
copper (Cu) electrodes are of great significance for next-generation large-size, high-refresh …

Solution-processed indium oxide is an ideal transparent semiconductor material with wide
band gap. Zirconium is an element characterized by a strong binding ability to oxygen which …

Flexible displays have developed rapidly in recent years, low-temperature process to
produce high performance amorphous oxide semiconductor devices are significant for the …

High-quality SnO2: Si films and SnO2: 10 at.% Ga films were prepared by the solution
method. The roughness of films is below 1.08 nm, and possess exceptional transparency (> …