A major challenge for the continued downscaling of integrated circuits is the resistivity
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …

Epitaxial Ru (0001) layers are sputter deposited onto Al 2 O 3 (0001) substrates and their
resistivity ρ measured both in situ and ex situ as a function of thickness d= 5–80 nm in order …

The effect of electron surface scattering on the thickness-dependent electrical resistivity ρ of
thin metal layers is investigated using nonequilibrium Green's function density functional …

Intermetallic compounds have been proposed as potential interconnect materials for
advanced semiconductor devices. This study reports the interdiffusion reliability and …

The resistivity size effect in Ir is quantified with in situ and ex situ transport measurements at
295 and 77 K using epitaxial layers with thickness d= 5–140 nm deposited on MgO (001) …

Mo (001) and Mo (011) layers with thickness d= 4–400 nm are sputter-deposited onto MgO
(001) and α-Al2O3 (11 2¯ 0) substrates and their resistivity is measured in situ and ex situ at …

The electron reflection probability r at symmetric twin boundaries Σ3, Σ5, Σ9, and Σ11 is
predicted from first principles for the eight most conductive face-centered cubic (fcc) metals. r …

The potential of a wide range of layered ternary carbide and nitride Mn+ 1AXn [an early
transition metal (M), an element of columns 13 or 14 of the periodic table (A), and either C or …

Rh (001) and Rh (111) layers with thickness d= 8-181 nm are sputter deposited onto MgO
(001) and Al2O3 (112̅0) substrates and their resistivity ρ measured in situ and ex situ at …

In situ and ex situ transport measurements on epitaxial Co (0001)/Al 2 O 3 (0001) layers with
thickness d= 7–300 nm are used to quantify the resistivity ρ scaling due to electron surface …