Ferroelectricity and large piezoelectric response of AlN/ScN superlattice
M Noor-A-Alam, O Z. Olszewski… - ACS Applied Materials & …, 2019 - ACS Publications
Based on density functional theory, we investigate the ferroelectric and piezoelectric
properties of the AlN/ScN superlattice, consisting of ScN and AlN buckled monolayers …
properties of the AlN/ScN superlattice, consisting of ScN and AlN buckled monolayers …
Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures
L Krieg, F Meierhofer, S Gorny, S Leis, D Splith… - Nature …, 2020 - nature.com
The combination of inorganic semiconductors with organic thin films promises new
strategies for the realization of complex hybrid optoelectronic devices. Oxidative chemical …
strategies for the realization of complex hybrid optoelectronic devices. Oxidative chemical …
AlN/GaN Digital alloy for mid-and deep-ultraviolet optoelectronics
Abstract The AlN/GaN digital alloy (DA) is a superlattice-like nanostructure formed by
stacking ultra-thin (≤ 4 monolayers) AlN barriers and GaN wells periodically. Here we …
stacking ultra-thin (≤ 4 monolayers) AlN barriers and GaN wells periodically. Here we …
M-plane AlGaN digital alloy for microwire UV-B LEDs
The growth of non-polar AlGaN digital alloy (DA) is achieved by metal-organic vapor phase
epitaxy using GaN microwire m-facets as the template. This AlGaN DA consisting of five …
epitaxy using GaN microwire m-facets as the template. This AlGaN DA consisting of five …
Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content
Abstract InGaN/GaN quantum wells (QWs) with sub-nanometer thickness can be employed
in short-period superlattices for bandgap engineering of efficient optoelectronic devices, as …
in short-period superlattices for bandgap engineering of efficient optoelectronic devices, as …
[HTML][HTML] Optical properties of InN/GaN quantum dot superlattice by changing dot size and interdot spacing
InN-based III nitride quantum dot (QD) technology has attracted much attention for extended
potential applications in photonic devices covering a broad spectrum compared to …
potential applications in photonic devices covering a broad spectrum compared to …
Mid-and long-infrared emission properties of InxGa1− xAsySb1− y quaternary alloy with Type-II InAs/GaSb superlattice distribution
In this work, an In x Ga 1− x As y Sb 1− y quaternary alloy with a vertical distribution of type-II
InAs/GaSb superlattices is grown in the miscibility gap using a fractional monolayer alloy …
InAs/GaSb superlattices is grown in the miscibility gap using a fractional monolayer alloy …
[HTML][HTML] Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE)
In this study, the Aluminium Nitride/Gallium Nitride (AlN/GaN) layers and Aluminium
Nitride/Aluminium Gallium Nitride/Gallium Nitride (AlN/AlGaN/GaN) layer heterostructures …
Nitride/Aluminium Gallium Nitride/Gallium Nitride (AlN/AlGaN/GaN) layer heterostructures …
Growth-favored nonpolar BAlN digital alloy with cation-order based tunable electronic structure
W Shang, J Zhu, X Wang, S Xu, J Zhang… - Journal of Alloys and …, 2023 - Elsevier
BAlN, an ultra-wide bandgap semiconductor, has attracted the interest of many due to its
potential in high-power electronics and high-efficiency optoelectronics. However, the solid …
potential in high-power electronics and high-efficiency optoelectronics. However, the solid …
Strain-Induced Band Gap Variation in InGaN/GaN Short Period Superlattices
P Chatzopoulou, IG Vasileiadis, P Komninou… - Crystals, 2023 - mdpi.com
The use of strained substrates may overcome indium incorporation limits without inducing
plastic relaxation in InGaN quantum wells, and this is particularly important for short-period …
plastic relaxation in InGaN quantum wells, and this is particularly important for short-period …