An eight-element 370–410-GHz phased-array transmitter in 45-nm CMOS SOI with peak EIRP of 8–8.5 dBm
This paper presents a 370-410-GHz phased-array transmitter, which is based on a W-band
distribution network, amplifiers, and vector modulators, feeding a linear eight-element …
distribution network, amplifiers, and vector modulators, feeding a linear eight-element …
Millimeter-wave CMOS power amplifiers with high output power and wideband performances
YH Hsiao, ZM Tsai, HC Liao, JC Kao… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
In this paper, we propose a design method of multi-way combining networks with impedance
transformation for millimeter-wave (MMW) power amplifiers (PAs) to achieve high output …
transformation for millimeter-wave (MMW) power amplifiers (PAs) to achieve high output …
Two-Way Current-Combining -Band Power Amplifier in 65-nm CMOS
This paper presents a two-way current-combining-based W-band power amplifier (PA) in 65-
nm CMOS technology. An analytical model and design method for W-band power combiners …
nm CMOS technology. An analytical model and design method for W-band power combiners …
High-power high-efficiency class-E-like stacked mmWave PAs in SOI and bulk CMOS: Theory and implementation
A Chakrabarti, H Krishnaswamy - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
<? Pub Dtl=""?> Series stacking of multiple devices is a promising technique that can help
overcome some of the fundamental limitations of CMOS technology in order to improve the …
overcome some of the fundamental limitations of CMOS technology in order to improve the …
Design techniques for low-voltage RF/mm-wave circuits in nanometer CMOS technologies
E Ragonese - Applied Sciences, 2022 - mdpi.com
This paper reviews state-of-the-art design approaches for low-voltage radio frequency (RF)
and millimeter-wave (mm-wave) CMOS circuits. Effective design techniques at RF/mm-wave …
and millimeter-wave (mm-wave) CMOS circuits. Effective design techniques at RF/mm-wave …
77–110 GHz 65-nm CMOS power amplifier design
KL Wu, KT Lai, R Hu, CF Jou, DC Niu… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
This paper details the development of our millimeter-wave wideband power amplifier
design. By treating the power combiner as an impedance transformer which allows different …
design. By treating the power combiner as an impedance transformer which allows different …
A 60-GHz power amplifier design using dual-radial symmetric architecture in 90-nm low-power CMOS
JF Yeh, JH Tsai, TW Huang - IEEE transactions on microwave …, 2013 - ieeexplore.ieee.org
An innovative on-chip 3-D power amplifier (PA) architecture for M-way power-combined
CMOS PAs by using the proposed dual-radial symmetric architecture is presented. It …
CMOS PAs by using the proposed dual-radial symmetric architecture is presented. It …
A 25.5-dB Peak Gain -Band Power Amplifier With an Adaptive Built-In Linearizer
This letter presents a three-stage differential power amplifier (PA) with an adaptive built-in
linearizer (ABL) that achieves an enhanced AM-AM linearity. Series inductors are introduced …
linearizer (ABL) that achieves an enhanced AM-AM linearity. Series inductors are introduced …
A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI MOS
A 90GHz power amplifier implemented with three series-connected (stacked) FETs in 45-nm
SOI CMOS is reported. Stacking FETs allows increasing voltage handling capability of …
SOI CMOS is reported. Stacking FETs allows increasing voltage handling capability of …
An E-band SiGe high efficiency, high harmonic suppression amplifier multiplier chain with wide temperature operating range
P Zhou, J Chen, P Yan, J Yu, D Hou… - … on Circuits and …, 2021 - ieeexplore.ieee.org
This paper presents a monolithically integrated E-band amplifier multiplier chain (AMC)
developed in 130 nm SiGe BiCMOS process. This E-band AMC is composed of a 25 GHz 1 …
developed in 130 nm SiGe BiCMOS process. This E-band AMC is composed of a 25 GHz 1 …