Investigation of modulation bandwidth of InGaN green micro-LEDs by varying quantum barrier thickness
Z Yuan, Y Li, X Lu, Z Wang, P Qiu, X Cui… - … on Electron Devices, 2022 - ieeexplore.ieee.org
InGaN-based micro light-emitting diodes (micro-LEDs) with 5, 10, and 13 nm quantum
barrier (QB) thickness were fabricated by metal-organic chemical vapor deposition …
barrier (QB) thickness were fabricated by metal-organic chemical vapor deposition …
Controlled synthesis of nonpolar GaInN/GaN multiple-quantum-shells on GaN nanowires by metal-organic chemical vapour deposition
W Lu, N Goto, H Murakami, N Sone, K Iida… - Applied Surface …, 2020 - Elsevier
Abstract Nonpolar GaInN/GaN multiple-quantum shells (MQSs) on nanowires (NWs) were
investigated for high-efficiency light-emitting diodes (LEDs). The growth conditions of NWs …
investigated for high-efficiency light-emitting diodes (LEDs). The growth conditions of NWs …
GaN-Based Freestanding Micro-LEDs With GHz Bandwidth and Low Efficiency Droop for Visible Light Communication
J Huang, G Wang, H Xu, F Xu, T Zhi… - … on Electron Devices, 2024 - ieeexplore.ieee.org
Visible light communication (VLC) based on micro light-emitting diodes (micro-LEDs) offers
energy-efficient methods for explosive data transmission. However, the severe quantum …
energy-efficient methods for explosive data transmission. However, the severe quantum …
Achieving uniform carrier distribution in MBE-grown compositionally graded InGaN multiple-quantum-well LEDs
We investigated the design and growth of compositionally graded InGaN multiplequantum-
well (MQW)-based light-emitting diodes (LEDs) without an electron-blocking layer …
well (MQW)-based light-emitting diodes (LEDs) without an electron-blocking layer …
Simulation of full-color III-nitride LED with intermediate carrier blocking layers
MV Kisin, DV Mamedov, HS El-Ghoroury - Optical and Quantum …, 2016 - Springer
Intermediate carrier blocking layers (ICBLs) adjacent to optically active quantum wells (QWs)
are used for tailoring the output color spectra in multi-color III-nitride light-emitting diode …
are used for tailoring the output color spectra in multi-color III-nitride light-emitting diode …
Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded
S Ge, J Dai, N Gao, S Lu, P Li, K Huang, B Liu… - Nanoscale Research …, 2019 - Springer
Deep ultraviolet AlGaN-based nanorod (NR) arrays were fabricated by nanoimprint
lithography and top-down dry etching techniques from a fully structural LED wafer. Highly …
lithography and top-down dry etching techniques from a fully structural LED wafer. Highly …
III-nitrides, 2D transition metal dichalcogenides, and their heterojunctions
P Mishra - 2017 - repository.kaust.edu.sa
Group III-nitride materials have attracted great attention for applications in high efficiency
electronic and optoelectronics devices such as high electron mobility transistors, light …
electronic and optoelectronics devices such as high electron mobility transistors, light …
Study on optical properties of indium-graded semipolar InGaN/GaN quantum well
F Zeng, L Zhu, W Liu, W Liu, H Wang… - IEEE Photonics …, 2016 - ieeexplore.ieee.org
The electronic and optical properties of indium-graded semipolar quantum well (QW)
structures with different indium variation schemes and well widths have been investigated by …
structures with different indium variation schemes and well widths have been investigated by …
III-Nitride Metalorganic Vapor-Phase Epitaxy
DD Koleske - Handbook of GaN Semiconductor Materials and …, 2017 - taylorfrancis.com
This article describes the metalorganic vapor-phase epitaxy (MOVPE) of group III-nitride
materials. Emphasis is placed on the chemistry, growth mechanisms, and materials …
materials. Emphasis is placed on the chemistry, growth mechanisms, and materials …
[PDF][PDF] Achieving Uniform Carrier Distribution in MBE-Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs
AY Alyamani - academia.edu
We investigated the design and growth of compositionally graded InGaN multiplequantum-
well (MQW)-based light-emitting diodes (LEDs) without an electron-blocking layer …
well (MQW)-based light-emitting diodes (LEDs) without an electron-blocking layer …