The use of nanoporous anodic alumina as a template for silicon nanowire growth enables
the production of ultra dense nanowire arrays with density up to 8.10 9 cm− 2. The …

The nucleation process of self-induced GaN nanowires grown by molecular beam epitaxy
has been investigated by reflection high-energy electron diffraction measurements. It is …

Silicon (Si) is currently the basis of most of our nanodevice technology and ultrathin
materials based on Si would have the great advantage of easy integration into existing …

The electrodeposition of gold colloidal nanoparticles on a silicon wafer in a uniform electric
field is investigated using scanning electron microscopy and homemade electrochemical …

We report the effect of applying an electric field on the surface coverage of 40nm gold
colloidal nanoparticles on silicon wafer using dip-coating and electrochemical cell set up. By …

Silicon nanowires (Si NWs) were fabricated on Si (111) surfaces using both magnetron
sputtering and thermal evaporation methods. Au thin layers were deposited using the …

Electrodeposition of copper in cylindrical pores of a nanoporous alumina template is
investigated. An electrochemical deposition mode with pulsed current is used in an aqueous …

A generic method for the growth of high density silicon nanowires in nano channels of
alumina is presented. All fabrication steps are shown. Using nanoimprint lithography …

In the current research, an easy and inexpensive method is used to synthesize highly
crystalline gallium nitride (GaN) nanowires (NWs) on two different substrates [ie, porous zinc …

A single silicon nanowire core–shell structure has been elaborated. Technological stages of
the process are presented. The device results in a P‐i‐N radial junction: the core is a P‐type …