The present study is a challenge to visualizing the solution growth behavior of SiC in a high-
temperature solvent of Si-Cr. In situ observation of SiC-solution growth interfaces with a …

A data-driven approach is used to describe the growth of crystals and thin films based on
high-throughput numerical experiments. This way the Machine Learning (ML) helps to …

Different patterns can be created on the surface of growing crystals, among which the step
bunches and/or step meanders are two of the most studied. The Ehrlich–Schwoebel effect at …

The crystallization proceeds by the advance of the crystal faces into the disordered phase at
the expense of the material excess, the supersaturation. Using a conservation constraint for …

The effect of step–step exclusion on growing vicinal surfaces destabilized by a step-up (SU)
or step-down (SD) driving force is extensively studied in diffusion-limited (DL) and kinetics …

The growth of a crystal is usually determined by its surface. Many factors influence the
growth dynamics. Energy barriers associated with the presence of steps most often decide …

The bunching of steps at the surface of growing and sublimating crystals can be induced by
both directions of the electromigration force acting on the adatoms, step-up and step-down …

Abstract A kinetic Monte Carlo (kMC) simulation with a cluster-multiple labeling technique
was carried out to study the dynamic behavior of Si-C clusters during the early stage of …

We revisit the step bunching instability without recourse to the quasistatic approximation and
show that the stability diagrams are significantly altered, even in the low-deposition regime …

One technique for creating semiconductor crystals with new, desired properties involves
replacing some atoms in the crystal lattice with additives-atoms of a different type. This …