The steeper transistors with low power and fast speeds are the major issue of future
transistors. To continue the progress of new technology used a different combination of …

Corona virus (COVID-19) is an infectious disease. Several millions of people worldwide
suffer from this disease. The signs of progress of virus infection are more severe damage to …

░ ABSTRACT-The work presented in this paper is a variable threshold voltage (ΔVth) model
of junction less fin gate tunnel FET (JL FinTFET) in which there is a shift in threshold voltage …

Nowadays agriculture plays a major role in the Indian economy. Farmers are the backbone
of the agriculture field. As you know there molka plants are grown up along with the crops …

Radiation-hardened model silicon on insulator fin gate tunnel field effect transistor (SOI
FinTFET) devices are used for spacecraft applications to protect from radiation effects. In …

The advancement of technological improvement are revved up to introduce the notion of
Artificial Intelligence of Things (AIOT) to eliminate human interaction in operation of the …

In this paper, we have proposed a surface model of double material Fin-shape gatetunnel
FET (DM Fin TFET) analyzed based on a perimeter-weighted method for low voltage …

This project is mainly focused on defending vehicles from unauthorised persons and fending
off robbers. Using a biometric fingerprint security system, only sanctioned people can move …

Soft Sensor-Based Remote Monitoring System for Industrial Environments Page 120 9
SOFT SENSOR-BASED REMOTE MONITORING SYSTEM FOR INDUSTRIAL …

This paper provides a surface model of a perimeter-weighted study of a double material Fin-
shape gate tunnel FET for steeper slope characteristics. The proposed double metal fin gate …