Improved interface microstructure between crystalline silicon and nanocrystalline silicon oxide window layer of silicon heterojunction solar cells
Y Zhou, L Zhang, W Liu, H Zhang, S Huang… - Solar Energy Materials …, 2024 - Elsevier
N-type hydrogenated nanocrystalline silicon oxide (nc-SiO x: H) is potential to enhance the
performance of silicon heterojunction solar cells, but the raised plasma damage on …
performance of silicon heterojunction solar cells, but the raised plasma damage on …
Pressure dependent structural and optical properties of silicon carbide thin films deposited by hot wire chemical vapor deposition from pure silane and methane gases
F Shariatmadar Tehrani, BT Goh, MR Muhamad… - Journal of Materials …, 2013 - Springer
Silicon carbide (SiC) thin films were deposited using hot wire chemical vapor deposition
technique from silane (SiH 4) and methane (CH 4) gas precursors. The effect of deposition …
technique from silane (SiH 4) and methane (CH 4) gas precursors. The effect of deposition …
Controlled-bandgap silicon nitride nanomaterials: deterministic nitrogenation in high-density plasmas
Q Cheng, S Xu, KK Ostrikov - Journal of Materials Chemistry, 2010 - pubs.rsc.org
To overcome major problems associated with insufficient incorporation of nitrogen in
hydrogenated amorphous silicon nitride (a-SiNx: H) nanomaterials, which in turn impedes …
hydrogenated amorphous silicon nitride (a-SiNx: H) nanomaterials, which in turn impedes …
High band gap nanocrystallite embedded amorphous silicon prepared by hotwire chemical vapour deposition
Hydrogenated silicon films ranging from pure amorphous to biphasic silicon ie,
nanocrystallites embedded amorphous silicon are prepared in an indigenously fabricated …
nanocrystallites embedded amorphous silicon are prepared in an indigenously fabricated …
Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot‐Wire Method with Varied Process Pressure
Hydrogenated nanocrystalline silicon films were prepared by hot‐wire method at low
substrate temperature (200∘ C) without hydrogen dilution of silane (SiH4). A variety of …
substrate temperature (200∘ C) without hydrogen dilution of silane (SiH4). A variety of …
Effect of substrate temperature on gold-catalyzed silicon nanostructures growth by hot-wire chemical vapor deposition (HWCVD)
The effect of substrate temperature on the structural property of the silicon nanostructures
deposited on gold-coated crystal silicon substrate by hot-wire chemical vapor deposition …
deposited on gold-coated crystal silicon substrate by hot-wire chemical vapor deposition …
Role of electrochemical process parameters on the electrodeposition of silicon from 1-butyl-1-methylpyrrolidinium bis (trifluoromethanesulfonyl) imide ionic liquid
S Thomas, D Kowalski, M Molinari, J Mallet - Electrochimica Acta, 2018 - Elsevier
Abstract The electrodeposition from Room Temperature Ionic Liquids (RTILs) has recently
emerged as a low cost technique for the growth of group IV thin films or nanostructures …
emerged as a low cost technique for the growth of group IV thin films or nanostructures …
Amorphous, polymorphous, and microcrystalline silicon thin films deposited by plasma at low temperatures
The present chapter is devoted to the study of amorphous (a-Si: H), polymorphous (pm-Si:
H), and microcrystalline (μc-Si: H) silicon, deposited by the plasma-enhanced chemical …
H), and microcrystalline (μc-Si: H) silicon, deposited by the plasma-enhanced chemical …
Inductively and capacitively coupled plasmas at interface: A comparative study towards highly efficient amorphous-crystalline Si solar cells
Y Guo, TMB Ong, I Levchenko, S Xu - Applied Surface Science, 2018 - Elsevier
A comparative study on the application of two quite different plasma-based techniques to the
preparation of amorphous/crystalline silicon (a-Si: H/c-Si) interfaces for solar cells is …
preparation of amorphous/crystalline silicon (a-Si: H/c-Si) interfaces for solar cells is …
Properties of a-Si: H films deposited by RF magnetron sputtering at 95 C
D Girginoudi, C Tsiarapas, N Georgoulas - Applied Surface Science, 2011 - Elsevier
In this work we have investigated the dependence of optical and electrical properties of RF
sputtered undoped a-Si: H films and B or P doped a-Si: H films on hydrogen flow rate (FH) …
sputtered undoped a-Si: H films and B or P doped a-Si: H films on hydrogen flow rate (FH) …