Self-diffusion in intrinsic single crystalline germanium was investigated between 429 and
596 C using G 70 e/G nat e isotope multilayer structures. The diffusivities were determined …

Diffusion of silicon (Si) and germanium (Ge) in silicon-germanium Si 1− x Ge x-isotope
heterostructures with Ge contents x= 0⁠, 0.05, 0.25, 0.45, and 0.70 was investigated in a …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe: C
have been widely used and under extensive research for applications in major …

While light-emitting nanostructures composed of group-IV materials fulfil the mandatory
compatibility with CMOS-fabrication methods, factors such as the structural stability of the …

The knowledge of diffusion processes in semiconducting alloys is very important both
technologically and from a theoretical point of view. Here we show that, self-diffusion in Si1 …

Silicon germanium alloys are technologically important in microelectronics but also they are
an important paradigm and model system to study the intricacies of the defect processes on …

A recently discovered, enhanced Ge diffusion mechanism along the oxidizing interface of
Si/SiGe nanostructures has enabled the formation of single-crystal Si nanowires and …

Epitaxial growth of Ge on Si has been widely studied for photonic and electronic
applications. However, GeSi interdiffusion during the growth or annealing deteriorates the …

Ge x Si1–x alloys are gaining renewed interest for many applications in electronics and
optics, especially for miniaturized devices showing quantum size effects. Point defects and …