Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges
Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …
much attention due to their technological potential in terms of scalability, high-speed, and …
A perspective on steep-subthreshold-slope negative-capacitance field-effect transistor
M Kobayashi - Applied Physics Express, 2018 - iopscience.iop.org
In today's highly information-oriented society, a continuously increasing number of
computing devices are needed in the Internet-of-Things (IoT) era, from high-end servers in …
computing devices are needed in the Internet-of-Things (IoT) era, from high-end servers in …
Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved Ids
We report the first ferroelectric (FE) HfZrO x (HZO) Ge and GeSn pMOSFETs with sub-60
mV/decade subthreshold swing (SS)(40~ 43 mV/decade), negligible hysteresis, and …
mV/decade subthreshold swing (SS)(40~ 43 mV/decade), negligible hysteresis, and …
Analysis and compact modeling of negative capacitance transistor with high ON-current and negative output differential resistance—Part II: Model validation
In this paper, we show a validation of our compact model for negative capacitance FET
(NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations …
(NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations …
Compact model for ferroelectric negative capacitance transistor with MFIS structure
We present a physics-based compact model for a ferroelectric negative capacitance FET
(NCFET) with a metal-ferroelectric-insulator-semiconductor (MFIS) structure. The model is …
(NCFET) with a metal-ferroelectric-insulator-semiconductor (MFIS) structure. The model is …
Ferroelectric field effect transistors (FeFETs): advancements, challenges and exciting prospects for next generation non-volatile memory (NVM) applications
Data intensive applications such as AI (Artificial Intelligence) and IoT (Internet of Things)
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
Evaluation of negative capacitance ferroelectric MOSFET for analog circuit applications
Negative capacitance ferroelectric (FE) field-effect transistor (FeFET) is promising to address
the issue of the increasing power density in digital circuit by realizing sub-60 mV/decade …
the issue of the increasing power density in digital circuit by realizing sub-60 mV/decade …
Review of ferroelectric field‐effect transistors for three‐dimensional storage applications
The ferroelectric field‐effect transistor (FeFET) is one of the leading contenders to succeed
charge‐trap‐based flash memory (CTF) devices in the current vertically‐integrated NAND …
charge‐trap‐based flash memory (CTF) devices in the current vertically‐integrated NAND …
Ferroelectric negative capacitance GeSn PFETs with sub-20 mV/decade subthreshold swing
Negative capacitance (NC) GeSn pFETs integrated with HfZrO x (HZO) ferroelectric film is
demonstrated with sub-20 mV/decade subthreshold swing (SS) over two orders of …
demonstrated with sub-20 mV/decade subthreshold swing (SS) over two orders of …
Stability constraints define the minimum subthreshold swing of a negative capacitance field-effect transistor
A Jain, MA Alam - IEEE Transactions on Electron Devices, 2014 - ieeexplore.ieee.org
The current-voltage characteristics of a classical field-effect transistor (FET) is dictated by
thermal injection of charge carriers over a gate-controlled energy barrier. It is well known …
thermal injection of charge carriers over a gate-controlled energy barrier. It is well known …