A continuous exponential rise has been observed in the storage and processing of the data
that may not curtail in the foreseeable future. The required data processing speed and …

We report on the effects on water oxidation performance of varying (1) the nanoscale TiO2
thickness and (2) the catalyst material in catalyst/TiO2/SiO2/Si anodes. Uniform films of …

Thin-film transistors (TFTs) with channels made of hydrogenated amorphous silicon (a-Si: H)
and polycrystalline silicon (poly-Si) are used extensively in the display industry. Amorphous …

The authors report upon the ultrafast bipolar switching characteristics observed in aluminum
nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset …

Gold nanoparticles (AuNPs) deposited on a doped silicon substrate induce a local band
bending and a local accumulation of positive charges in a semiconductor. Unlike the case of …

Novel devices incorporating multiple layers of new materials increase the complexity of
device structures, particularly in field-effect transistors, capacitors, and nonvolatile memory …

The charge trapping memory devices based on different HfO 2/Al 2 O 3 nanolaminated
charge trapping layers were prepared and investigated. The memory device with 6 …

The gate leakage current of metal-oxide-semiconductors (MOSs) composed of hafnium
oxide (HfO 2) exhibits temperature dependence, which is usually attributed to the standard …

We report on a study of spin transport via electrically detected magnetic resonance (EDMR)
and near-zero field magnetoresistance (MR) in silicon nitride films. Silicon nitrides have long …

We proposed a new method for characterization of oxide traps leading to Random
Telegraph Noise (RTN) in high-k and metal gate MOSFETs considering their energy band …