Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs

G Hu, S Hu, J Feng, R Liu, L Wang, L Zheng - Microelectronics journal, 2016 - Elsevier
Analytical models for channel potential, threshold voltage, and subthreshold swing of the
short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model …
被引用次数：32 相关文章

Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs

G Hu, S Hu, J Feng, R Liu, L Wang, L Zheng - Microelectronics Journal, 2016 - infona.pl
Analytical models for channel potential, threshold voltage, and subthreshold swing of the
short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model …

Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs

G Hu, S Hu, J Feng, R Liu, L Wang, L Zheng - Microelectronics Journal, 2016 - dl.acm.org
Analytical models for channel potential, threshold voltage, and subthreshold swing of the
short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model …

[引用][C] Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs

G Hu, S Hu, J Feng, R Liu, L Wang, L Zheng - Microelectronics Journal, 2016 - cir.nii.ac.jp
Analytical models for channel potential, threshold voltage, and subthreshold swing of
junctionless triple-gate FinFETs | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ …