Chemical-Potential-Dependent Gap Opening at the Dirac Surface States of Induced by Aggregated Substitutional Cr Atoms

CZ Chang, P Tang, YL Wang, X Feng, K Li, Z Zhang… - Physical review …, 2014 - APS
With angle-resolved photoemission spectroscopy, gap opening is resolved at up to room
temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi 2 Se 3 …
被引用次数：161 相关文章

Chemical-Potential-Dependent Gap Opening at the Dirac Surface States ofInduced by Aggregated Substitutional Cr Atoms

CZ Chang, P Tang, YL Wang, X Feng, K Li… - Physical Review …, 2014 - cir.nii.ac.jp
Chemical-Potential-Dependent Gap Opening at the Dirac Surface States of< mml: math
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Chemical-potential-dependent gap opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms

CZ Chang, P Tang, YL Wang, X Feng… - Physical review …, 2014 - pubmed.ncbi.nlm.nih.gov
With angle-resolved photoemission spectroscopy, gap opening is resolved at up to room
temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 …

Chemical-potential-dependent gap opening at the dirac surface states of Bi 2 Se 3 induced by aggregated substitutional Cr atoms

C Zu Chang, P Tang, YL Wang, X Feng, K Li… - Physical review …, 2014 - pure.psu.edu
With angle-resolved photoemission spectroscopy, gap opening is resolved at up to room
temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 …
[PDF] researchgate.net

[PDF][PDF] Chemical potential dependent gap-opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms

Z Zhang, Y Wang, LL Wang, X Chen, C Liu, W Duan… - researchgate.net
With angle-resolved photoemission spectroscopy, gap-opening is resolved at up to room
temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 …

Chemical-Potential-Dependent Gap Opening at the Dirac Surface States of Bi2Se3 Induced by Aggregated Substitutional Cr Atoms

CZ Chang, P Tang, YL Wang, X Feng… - Physical Review …, 2014 - ui.adsabs.harvard.edu
With angle-resolved photoemission spectroscopy, gap opening is resolved at up to room
temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi 2 Se 3 …

Chemical-potential-dependent gap opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms.

CZ Chang, P Tang, YL Wang, X Feng, K Li… - Physical Review …, 2014 - europepmc.org
With angle-resolved photoemission spectroscopy, gap opening is resolved at up to room
temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 …

Chemical potential dependent gap-opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms

CZ Chang, P Tang, YL Wang, X Feng, K Li… - arXiv preprint arXiv …, 2014 - arxiv.org
With angle-resolved photoemission spectroscopy, gap-opening is resolved at up to room
temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 …