Pulsed high-density plasmas for advanced dry etching processes
Plasma etching processes at the 22 nm technology node and below will have to satisfy
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …
Pulsed high-density plasmas for advanced dry etching processes
S Banna, A Agarwal, G Cunge, M Darnon… - Journal of Vacuum …, 2012 - osti.gov
Plasma etching processes at the 22 nm technology node and below will have to satisfy
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …
[引用][C] Pulsed high-density plasmas for advanced dry etching processes
S Banna, A Agarwal, G Cunge, M Darnon… - Journal of Vacuum …, 2012 - cir.nii.ac.jp
Pulsed high-density plasmas for advanced dry etching processes
S Banna, A Ankargul, G Cunge, M Darnon… - Journal of Vacuum …, 2012 - cea.hal.science
Plasma etching processes at the 22 nm technology node and below will have to satisfy
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …
Pulsed high-density plasmas for advanced dry etching processes
S Banna, A Agarwal, G Cunge, M Darnon… - Journal of Vacuum …, 2012 - pubs.aip.org
Plasma etching processes at the 22nm technology node and below will have to satisfy
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …
Pulsed high-density plasmas for advanced dry etching processes
S Banna, A Agarwal, G Cunge… - Journal of Vacuum …, 2012 - ui.adsabs.harvard.edu
Plasma etching processes at the 22 nm technology node and below will have to satisfy
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …
Pulsed high-density plasmas for advanced dry etching processes
S Banna, A Agarwal, G Cunge, M Darnon… - Journal of Vacuum …, 2012 - inis.iaea.org
[en] Plasma etching processes at the 22 nm technology node and below will have to satisfy
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …
Pulsed high-density plasmas for advanced dry etching processes
S Banna, A Ankargul, G Cunge, M Darnon… - Journal of Vacuum …, 2012 - hal.science
Plasma etching processes at the 22 nm technology node and below will have to satisfy
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …
Pulsed high-density plasmas for advanced dry etching processes
S Banna, A Ankargul, G Cunge… - Journal of Vacuum …, 2012 - hal.univ-grenoble-alpes.fr
Plasma etching processes at the 22 nm technology node and below will have to satisfy
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …
[PDF][PDF] Pulsed high-density plasmas for advanced dry etching processes
S Banna, A Ankargul, G Cunge, M Darnon, E Pargon… - hal.science
Plasma etching processes at the 22nm technology node and below will have to satisfy
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …