A physics-based model for LER-induced threshold voltage variations in double-gate MOSFET

SR Sriram, B Bindu - Journal of Computational Electronics, 2020 - Springer
The line-edge roughness (LER) has become one of the dominant sources of process
variations in multi-gate transistors. The estimation of threshold voltage distribution due to …
被引用次数：6 相关文章

A physics-based model for LER-induced threshold voltage variations in double-gate MOSFET

SR Sriram, B Bindu - Journal of Computational Electronics, 2020 - search.proquest.com
The line-edge roughness (LER) has become one of the dominant sources of process
variations in multi-gate transistors. The estimation of threshold voltage distribution due to …

A physics-based model for LER-induced threshold voltage variations in double-gate MOSFET

SR Sriram, B Bindu - Journal of Computational Electronics, 2020 - dl.acm.org
The line-edge roughness (LER) has become one of the dominant sources of process
variations in multi-gate transistors. The estimation of threshold voltage distribution due to …