Analytic model for subthreshold channel potential and threshold voltage of the Schottky-barrier surrounding-gate MOSFETS
GX Hu, SY Hu, PC Li, R Liu, LL Wang… - 2014 12th IEEE …, 2014 - ieeexplore.ieee.org
The threshold voltage, V th, of a surrounding-gate (SG) Schottky-barrier (SB) metal-oxide-
semiconductor field-effect transistor (MOSFET) is investigated. An analytical expression for …
semiconductor field-effect transistor (MOSFET) is investigated. An analytical expression for …
Analytic model for subthreshold channel potential and threshold voltage of the Schottky-barrier surrounding-gate MOSFETS
GX Hu, SY Hu, PC Li, R Liu, LL Wang, X Zhou - 2014 12th IEEE International … - infona.pl
The threshold voltage, V th, of a surrounding-gate (SG) Schottky-barrier (SB) metal-oxide-
semiconductor field-effect transistor (MOSFET) is investigated. An analytical expression for …
semiconductor field-effect transistor (MOSFET) is investigated. An analytical expression for …
A simulation model for PDSOI MOSFETs
J Bu, Y Li, J Luo, Z Han - … on Solid-State and Integrated Circuit …, 2014 - ieeexplore.ieee.org
The shallow source and drain is used in the PDSOI technology. Unfortunately, most of the
standard commercial SOI MOSFET model is for the device with deep source and drain, the …
standard commercial SOI MOSFET model is for the device with deep source and drain, the …
A simulation model for PDSOI MOSFETs
J Bu, Y Li, J Luo, Z Han - 2014 12th IEEE International Conference on Solid … - infona.pl
The shallow source and drain is used in the PDSOI technology. Unfortunately, most of the
standard commercial SOI MOSFET model is for the device with deep source and drain, the …
standard commercial SOI MOSFET model is for the device with deep source and drain, the …
