InAs/GaAs (1 0 0) self-assembled quantum dots: arsenic pressure and capping effects

BJ Riel, K Hinzer, S Moisa, J Fraser, P Finnie… - Journal of crystal …, 2002 - Elsevier
We explore growth effects leading to size and compositional limitations in the production of
self-assembled quantum dots (QD) emitting at long wavelengths. Molecular beam epitaxy …
被引用次数：71 相关文章

[引用][C] InAs/GaAs (100) self-assembled quantum dots: arsenic pressure and capping effects

BJ RIEL, K HINZER, S MOISA, J FRASER… - Journal of crystal …, 2002 - pascal-francis.inist.fr
InAs/GaAs(100) self-assembled quantum dots: arsenic pressure and capping effects CNRS
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[引用][C] InAs/GaAs (100) self-assembled quantum dots: arsenic pressure and capping effects

BJ Riel, K Hinzer, S Moisa, J Fraser, P Finnie… - Journal of Crystal …, 2002 - cir.nii.ac.jp
InAs/GaAs(100) self-assembled quantum dots: arsenic pressure and capping effects | CiNii
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InAs/GaAs (1 0 0) self-assembled quantum dots: arsenic pressure and capping effects

BJ Riel, K Hinzer, S Moisa, J Fraser… - Journal of Crystal …, 2002 - ui.adsabs.harvard.edu
We explore growth effects leading to size and compositional limitations in the production of
self-assembled quantum dots (QD) emitting at long wavelengths. Molecular beam epitaxy …
[PDF] academia.edu

[PDF][PDF] InAs/GaAs (1 0 0) self-assembled quantum dots: arsenic pressure and capping effects

BJ Riel, K Hinzer, S Moisa, J Fraser, P Finnie… - Journal of Crystal …, 2002 - academia.edu
We explore growth effects leading to size and compositional limitations in the production of
self-assembled quantum dots (QD) emitting at long wavelengths. Molecular beam epitaxy …

InAs/GaAs (100) self-assembled quantum dots: arsenic pressure and capping effects

BJ Riel, K Hinzer, S Moisa, J Fraser, P Finnie… - Journal of Crystal …, 2002 - infona.pl
We explore growth effects leading to size and compositional limitations in the production of
self-assembled quantum dots (QD) emitting at long wavelengths. Molecular beam epitaxy …