In‐Situ Transmission Electron Microscopy Observation of Germanium Growth on Freestanding Graphene: Unfolding Mechanism of 3D Crystal Growth During Van der …
Breakthroughs in cutting‐edge research fields such as hetero‐integration of materials and
the development of quantum devices are heavily bound to the control of misfit strain during …
the development of quantum devices are heavily bound to the control of misfit strain during …
[PDF][PDF] In-Situ Transmission Electron Microscopy Observation of Germanium Growth on Freestanding Graphene: Unfolding Mechanism of 3D Crystal Growth During …
TM Diallo, MR Aziziyan, R Arvinte, JC Harmand… - researchgate.net
Figure S1.(a) schematic illustration of the E-chip (substrate) used for the in-situ TEM growth.
The right scheme displays the central membrane of the chip exhibiting the 9 holes with 8µm …
The right scheme displays the central membrane of the chip exhibiting the 9 holes with 8µm …
In‐Situ Transmission Electron Microscopy Observation of Germanium Growth on Freestanding Graphene: Unfolding Mechanism of 3D Crystal Growth During Van der …
TM Diallo, MR Aziziyan, R Arvinte, JC Harmand… - Small, 2021 - hal.science
Breakthroughs in cutting-edge research fields such as hetero-integration of materials and
the development of quantum devices are heavily bound to the control of misfit strain during …
the development of quantum devices are heavily bound to the control of misfit strain during …
In-Situ Transmission Electron Microscopy Observation of Germanium Growth on Freestanding Graphene: Unfolding Mechanism of 3D Crystal Growth During Van der …
TM Diallo, MR Aziziyan, R Arvinte… - Small (Weinheim an …, 2021 - europepmc.org
Breakthroughs in cutting-edge research fields such as hetero-integration of materials and
the development of quantum devices are heavily bound to the control of misfit strain during …
the development of quantum devices are heavily bound to the control of misfit strain during …
In‐Situ Transmission Electron Microscopy Observation of Germanium Growth on Freestanding Graphene: Unfolding Mechanism of 3D Crystal Growth During Van der …
TM Diallo, MR Aziziyan, R Arvinte, JC Harmand… - …, 2021 - hal.univ-grenoble-alpes.fr
Breakthroughs in cutting-edge research fields such as hetero-integration of materials and
the development of quantum devices are heavily bound to the control of misfit strain during …
the development of quantum devices are heavily bound to the control of misfit strain during …
In-Situ Transmission Electron Microscopy Observation of Germanium Growth on Freestanding Graphene: Unfolding Mechanism of 3D Crystal Growth During Van der …
TM Diallo, MR Aziziyan, R Arvinte… - … (Weinheim an der …, 2022 - pubmed.ncbi.nlm.nih.gov
Breakthroughs in cutting-edge research fields such as hetero-integration of materials and
the development of quantum devices are heavily bound to the control of misfit strain during …
the development of quantum devices are heavily bound to the control of misfit strain during …
[PDF][PDF] In-Situ Transmission Electron Microscopy Observation of Germanium Growth on Freestanding Graphene: Unfolding Mechanism of 3D Crystal Growth During …
TM Diallo, MR Aziziyan, R Arvinte, JC Harmand… - hal.science
Van der Waals (VdW) heterostructures, including two-dimensional (2D) layered materials
and conventional three-dimensional (3D) materials with surface dangling bonds, have …
and conventional three-dimensional (3D) materials with surface dangling bonds, have …
