Full bottom dielectric isolation to enable stacked nanosheet transistor for low power and high performance applications
In this paper, full bottom dielectric isolation (BDI) is first demonstrated on horizontally
stacked Nanosheet device structures with Lmetal 12 nm. The comparison of full BDI scheme …
stacked Nanosheet device structures with Lmetal 12 nm. The comparison of full BDI scheme …
[PDF][PDF] Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications
J Zhang, J Frougier, A Greene, X Miao, L Yu, R Vega… - researchgate.net
In this paper, full bottom dielectric isolation (BDI) is first demonstrated on horizontally
stacked Nanosheet device structures with Lmetal 12 nm. The comparison of full BDI scheme …
stacked Nanosheet device structures with Lmetal 12 nm. The comparison of full BDI scheme …
Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications
J Zhang, J Frougier, A Greene, X Mao… - IEEE International …, 2019 - research.ibm.com
In this paper, full bottom dielectric isolation (BDI) is first demonstrated on horizontally
stacked Nanosheet device structures with Lmetal 12 nm. The comparison of full BDI scheme …
stacked Nanosheet device structures with Lmetal 12 nm. The comparison of full BDI scheme …