Growth of wurtzite GaN films on αAl2O3 substrates using light-radiation heating metal-organic chemical vapor deposition

B Shen, YG Zhou, ZZ Chen, P Chen, R Zhang, Y Shi… - Applied Physics A, 1999 - Springer
Epitaxial growth of high-quality hexagonal GaN films on sapphire substrates using light-
radiation heating metal-organic chemical vapor deposition (LRH-MOCVD) is first reported …
被引用次数：42 相关文章

Growth of wurtzite GaN films on αAl2O3 substrates using light-radiation heating metal-organic chemical vapor deposition

B Shen, YG Zhou, ZZ Chen, P Chen, R Zhang… - Applied Physics A …, 1999 - elibrary.ru
Epitaxial growth of high-quality hexagonal GaN films on sapphire substrates using light-
radiation heating metal-organic chemical vapor deposition (LRH-MOCVD) is first reported …

[引用][C] Growth of wurtzite GaN films on α-Al2O3 substrates using light-radiation heating metal-organic chemical vapor deposition

B SHEN, YG ZHOU, ZZ CHEN, P CHEN… - Applied physics. A …, 1999 - pascal-francis.inist.fr
Growth of wurtzite GaN films on α-Al2O3 substrates using light-radiation heating metal-organic
chemical vapor deposition CNRS Inist Pascal-Francis CNRS Pascal and Francis …

Growth of wurtzite GaN films on Al2O3 substrates using light-radiation heating metal-organic chemical vapor deposition

B Shen, YG Zhou, ZZ Chen, P Chen, R Zhang, Y Shi… - Applied Physics A, 1999 - infona.pl
Epitaxial growth of high-quality hexagonal GaN films on sapphire substrates using light-
radiation heating metal-organic chemical vapor deposition (LRH-MOCVD) is first reported …

Growth of wurtzite GaN films on αAl [sub 2] O [sub 3] substrates using light-radiation heating metal-organic chemical vapor deposition.

B Shen, YG Zhou, ZZ Chen, P Chen… - Applied Physics A …, 1999 - search.ebscohost.com
Abstract. Epitaxial growth of high-quality hexagonal GaN films on sapphire substrates using
light-radiation heating metal-organic chemical vapor deposition (LRH-MOCVD) is first …

Growth of wurtzite GaN films on αAl2O3 substrates using light-radiation heating metal-organic chemical vapor deposition

B Shen, YG Zhou, ZZ Chen, P Chen… - Applied Physics A …, 1999 - ui.adsabs.harvard.edu
Epitaxial growth of high-quality hexagonal GaN films on sapphire substrates using light-
radiation heating metal-organic chemical vapor deposition (LRH-MOCVD) is first reported …

Growth of wurtzite GaN films on αAl [sub 2] O [sub 3] substrates using light-radiation heating metal-organic chemical vapor deposition.

B Shen, YG Zhou, ZZ Chen, P Chen… - Applied Physics A …, 1999 - search.ebscohost.com
Abstract. Epitaxial growth of high-quality hexagonal GaN films on sapphire substrates using
light-radiation heating metal-organic chemical vapor deposition (LRH-MOCVD) is first …

[引用][C] Growth of wurtzite GaN films on α-Al2O3 substrates using light-radiation heating metal-organic chemical vapor deposition

B SHEN, YG ZHOU, ZZ CHEN, P CHEN… - Applied physics. A …, 1999 - Springer

[引用][C] Growth of wurtzite GaN films on αAl2O3 substrates using light-radiation heating metal-organic chemical vapor deposition

B Shen, YG Zhou, ZZ Chen, P Chen, R Zhang… - Applied Physics A …, 1999 - Springer