Understanding and exploiting design-induced latency variation in modern DRAM chips

D Lee, S Khan, L Subramanian, S Ghose… - arXiv preprint arXiv …, 2016 - arxiv.org
Variation has been shown to exist across the cells within a modern DRAM chip. We
empirically demonstrate a new form of variation that exists within a real DRAM chip, induced …

[PDF][PDF] Understanding and Exploiting Design-Induced Latency Variation in Modern DRAM Chips

D Lee, S Khanℵ, L Subramanian, S Ghose… - rausavar.github.io
Variation has been shown to exist across the cells within a modern DRAM chip. Prior work
has studied and exploited several forms of variation, such as manufacturing-processor …

Understanding and Exploiting Design-Induced Latency Variation in Modern DRAM Chips

D Lee, S Khan, L Subramanian, S Ghose… - arXiv e …, 2016 - ui.adsabs.harvard.edu
Variation has been shown to exist across the cells within a modern DRAM chip. We
empirically demonstrate a new form of variation that exists within a real DRAM chip, induced …