Growth of GaAs on Ge/Si (001) nanovoided virtual substrate
The integration of III-V compounds on Si substrate is very promising for photovoltaic
applications. This would be an alternative to obtain low cost and high efficiency solar cells …
applications. This would be an alternative to obtain low cost and high efficiency solar cells …
Engineering dislocations and nanovoids for high-efficiency III–V photovoltaic cells on silicon
The use promising group III-V materials for photovoltaic applications is hindered by the high
density of threading dislocations when integrated with silicon technology. Here, we present …
density of threading dislocations when integrated with silicon technology. Here, we present …
Defects Engineering in Heteroepitaxial Growth of Ge-on-Si: Porous Germanium-based Virtual Substrates for High-Efficiency Photovoltaic Devices
YA Bioud - 2018 - hal.science
Today's photovoltaics market is dominated by silicon-based technology, as it is inexpensive
and mature. Solar cells (SCs) based on III-V compound semiconductors have attained the …
and mature. Solar cells (SCs) based on III-V compound semiconductors have attained the …
Voided Ge/Si Platform to Integrate III-V Materials on Si
High-quality germanium epilayers on Si with low threadingdislocation densities are
achieved by self-assembling nanovoids inside the Ge layer. This consists on the formation of …
achieved by self-assembling nanovoids inside the Ge layer. This consists on the formation of …
A porous Ge/Si interface layer for defect-free III-V multi-junction solar cells on silicon
III-V solar cell cost reduction and direct III-V/Si integration can both be realized by depositing
a thin layer of high-quality Ge on relatively low-cost Si substrates. However, direct epitaxial …
a thin layer of high-quality Ge on relatively low-cost Si substrates. However, direct epitaxial …
Fabrication of ultrathin Ge template for growth of multijunction solar cells based on wafer-scale porous Ge
Multijunction solar cells (MJSC) currently hold the highest efficiency on the market. However,
their widespread in terrestrial applications is getting held back by the high devices cost. A …
their widespread in terrestrial applications is getting held back by the high devices cost. A …
Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing
A comparison between the crystalline quality of Ge grown on bulk Si and on a low porosity
porous Si (pSi) buffer layer using low energy plasma enhanced chemical vapor deposition is …
porous Si (pSi) buffer layer using low energy plasma enhanced chemical vapor deposition is …
Defect-free, heteroepitaxy through electrochemical etching of germanium for multijunction solar cells applications
A low-cost method to reduce the threading dislocations density (TDD) in relaxed germanium
(Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si substrate was treated with …
(Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si substrate was treated with …
Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells
R Ginige, B Corbett, M Modreanu… - Semiconductor …, 2006 - iopscience.iop.org
A virtual substrate consisting of a Ge layer grown directly on Si without an intervening SiGe
graded layer is characterized. The nominally 100% Ge overlayer is fully relaxed and …
graded layer is characterized. The nominally 100% Ge overlayer is fully relaxed and …
Effect of voided germanium thin-films grown onto silicon substrate on dislocations evolution
High-quality germanium (Ge) epilayers on silicon (Si) with low threading dislocation density
were achieved by sintering of porous Si/Ge films. The process consists of the formation of …
were achieved by sintering of porous Si/Ge films. The process consists of the formation of …